西门康可控硅介绍

SEMIPACK? Thyristor/Diode Modules Features

?Modules with isolated baseplate and thyristor and/or diode chips for currents up to 1200A and reverse voltages up to 2200 V

?Available as single component elements or as double packs with internal, functional interconnection ?Case with copper baseplate in 7 sizes

SEMIPACK? 0: 61 x 21 mm, module height 23.2 mm SEMIPACK? 1: 93 x 20 mm, module height 30 mm

SEMIPACK? 2: 94 x 29 mm, module height 30 mm

SEMIPACK? 3: 115 x 51 mm, module height 52 mm SEMIPACK? 4: 101 x 50 mm, module height 52 mm SEMIPACK? 5: 150 x 60 mm, module height 52 mm SEMIPACK? 6: 104 x 70 mm, module height 90 mm SEMITRANS? 4: 107 x 62 mm, module height 37 mm (fast, high-current modules SKKE 330F, SKKE 600F with CAL diodes)

?Screw connections for power interconnect (SEMI-PACK? 0: Fast-on tabs)

?Semiconductor chips soldered onto ceramic isolated metal baseplate (SEMIPACK? 0...2 and some SEMI-PACK? 3, SEMITRANS? 4 modules) or pressure con-tact modules (SEMIPACK? 3, 4, 5, 6) with very high load cycle capability

?Optimum heat transfer to heat sink thanks to ceramic isolated metal baseplate with Al2O3 (SEMIPACK? 0, 1,

2) or AlN (SEMIPACK? 3, 4, 5, 6) insulating substrate

and copper baseplate

?No hard mould (Exceptions: SEMIPACK? 0 and some SEMIPACK? 1 modules

?Thyristor chips in SEMIPACK? 3...6 with amplifying gate to reduce the gate current

?Fast diode modules with diodes in diffusion, Epitaxial and CAL (Controlled Axial Lifetime) technology up to 600 A and 1700 V

?Insulation voltage up to 4 kVrms for 1 min., 4.8kV rms for 1 s

?UL approval in accordance with UL1557, Reference no. E63532

Technical Explanations

The terms in [ ] apply to thyristors only

Insulation voltage V isol

The insulation voltage of SEMIPACK? modules is a gua-ranteed value for the insulation between the terminals and the baseplate. The limiting value 3.6kV rms specified for 1s is subject to 100 % production testing.

All terminals - including the gate connections - must be interconnected during dielectric testing. All specifications for the final product's dielectric test voltage are described in the IEC publications IEC60146-1-1:1991 and EN60146-1-1:1994 Section 4.2.1 (=VDE0558 T1-1: 1993), EN 50178:11.1997 (= DIN EN50178 (VDE 0160): 1998, as well as in UL1557: 1997. For railway applications, for instance, please refer to the specificati-ons of the IEC61287-1 standard.

Non-repetitive peak reverse voltage V RSM; [Non-repeti-tive peak off-state voltage V DSM]

Maximum permissible value for non-repetitive, occasio-nally transient peak voltages.

Repetitive peak reverse voltage V RRM [and off-state voltage V DRM]

Maximum permissible value for repetitive transient off-state and reverse voltages.

Direct blocking voltages V R, [V D] for continuous duty Maximum permissible direct reverse voltage for stationary operation for diodes (V R) [or thyristors (V D, V R)]. This value is 0.7 V RRM [0.7 V DRM].

Mean forward [on-state] current I FAV, [I TAV]

The symbols I FAV, [I TAV] are used to refer to both the mean current values in general and the current limits. The limi-ting values are absolute maximum continuous values for the on-state current load of a diode [thyristor] for a given current waveform and given cooling conditions (e.g. case temperature T c). At this current value, the maximum per-missible junction temperature is reached, with no margins for overload or worst-case reserves. The recommended maximum continuous current is therefore approximately 0.8 I TAV . For operation frequencies of between 40 Hz and 200 Hz the maximum mean on-state current can be taken from Fig. 1 of the datasheet. If standard diodes and thyri-stors (diodes/thyristors for line application) are operated at frequencies of between 200 Hz and 500 Hz, further cur-rent reductions should be carried out to compensate for the switching losses that are no longer negligible.

RMS forward [on-state] current I FRMS, [I TRMS]

The symbols I FRMS, [I TRMS] are used to refer to both the mean current values and the current limits. The limiting values are absolute maximum values for the continuous on-state current for any chosen current waveform and cooling conditions.

Surge forward [on-state] current I FSM [I TSM]

Crest value for a surge current in the form of a single sinu-soidal half wave which lasts for 10 ms. After occasional current surges with current values up to the given surge forward current, the diode [thyristor] can withstand the

reverse voltages specified in Fig. 8 or Fig. 16 of the data sheets.

Surge current characteristics I F(OV), [I T(OV)]

Crest values for full or part sinusoidal half wave currents lasting between 1 ms and 10 ms or for sequential sinusoi-dal half wave currents with a maximum duration of 10 ms, permissible under fault conditions only, i.e. the diode [thy-ristor] may only be subjected to this value occasionally; the controllability of a thyristor may be lost during over-load. The overload current depends on the off-state voltage value across the component (cf. Fig. 8 or Fig. 16 of the data sheets).

i2t value

This value is given to assist in the selection of suitable fuses to provide protection against damage caused by short circuits and is given for junction temperatures of 25°C and 125 °C. The i2t value of the fuse for the intended input voltage and the prospective short circuit in the device must be lower than the i2t of the diode [thyristor] for t = 10ms. When the operating temperature increases, the i2t value of the fuse falls more rapidly than the i2 t value of the diode [thyristor], a comparison between the i2t of the diode (thyristor) for 25 °C and the i2t value of the (unloaded) fuse is generally sufficient.

[Critical rate of rise of on-state current (di/dt)cr] Immediately after the thyristor has been triggered, only part of the chips conducts the current flow, meaning that the rate rise of the on-state current has to be limited. The critical values specified apply to the following conditions: repetitive loads of between 50 and 60 Hz; a peak current value corresponding to the crest value of the permissible on-state current for sinusoidal half waves; a gate trigger current that is five times the peak trigger current with a rate of rise of at least 1 A/μs. The critical rate of rise for on-state current falls as the frequency increases, but rises as the peak on-state current decreases. For this reason, for fre-quencies >60 Hz and pulses with a high rate of rise of cur-rent, the peak on-state current must be reduced to values below those given in the datasheets.

[Critical rate of rise of off-state voltage (dv/dt)cr]

The values specified apply to an exponential increase in off-state voltage to 0.66 V DRM. If these values are excee-ded, the thyristor can break over and self trigger.

Direct reverse [off-state] current I RD [I DD]

Maximum reverse or off-state [for thyristors] current for the given temperature and maximum voltage. This value depends exponentially on the temperature.

Direct forward [on-state] voltage V F [V T]

Maximum forward voltage across the main terminals for a given current at 25°C.Threshold voltage V(TO) [V T(TO)] and Forward [on-state] slope resistance r T

These two values define the forward characteristics (upper value limit) and are used to calculate the instanta-neous value of the forward power dissipation P F [P T] or the mean forward power dissipation P FAV [P TAV]:

P F[T] = V T(TO) * I F[T] + r T * i2F[T]

P F[T]AV = V T(TO) * I F[T]AV + r T * I2F[T]RMS

I2F[T]RMS / I2F[T]AV = 360° / Θ

for square-wave pulses

I2F[T]RMS / I2F[T]AV = 2.5 or

I2F[T]RMS / I2F[T]AV = (π/2)2 * 180° / Θ

for [part] sinusoidal half waves

Θ: Current flow angle

i F[T]: Instantaneous forward current value

I F[T]RMS: RMS forward [on-state] current

I F[T]AV: Mean forward [on-state] current

[Latching current I L]

Minimum anode current which at the end of a triggering pulse lasting 10 μs will hold the thyristor in its on-state. The values specified apply to the triggering conditions stipula-ted in the section on "Critical rate of rise of on-state cur-rent".

[Holding current I H]

Minimum anode current which will hold the thyristor in its on-state at a temperature of 25 °C. If the thyristor is swit-ched on at temperatures below 25 °C, the values specified may be exceeded.

Recovery charge Q rr

Q rr is the total charge which flows through the main circuit (current-time area) during commutation against the reverse recovery time t rr. The corresponding characteristic in the datasheet shows this value's dependence on the forward current threshold value I FM [I TM] before commuta-tion, as well as the forward current rate of fall di/dt (cf. Fig.1).

Fig. 1 Current curve during diode/thyristor turn-off

The following relations exist between t rr , Q rr , the current fall time t f and the peak reverse recovery current I RM (cf.Fig. 1):

t rr = I RM / (- di F[T]/dt) + t f

I RM = 2 * Q rr / t rr

If the fall rate of the forward current I F [I T

] is very low, t f will be small in comparison to t rr

and the equations can be sim-plified as follows:

Further details, in particular with regard to fast diode swit-ching, can be found in the section "Fast rectifier diodes"under "Diode turn-off".

[Circuit commutated turn-off time t q ]

The circuit commutated turn-off time lies in the range of several hundred μs and constitutes the time required for a thyristor to discharge to allow it to take on forward voltage again. This value is defined as the time that elapses bet-ween zero crossing of the commutation voltage and the earliest possible load with off-state voltage. In the case of thyristors for phase-commutated converters and a.c. con-verters, the circuit commutated turn-off time is usually of no significance. For this reason, the datasheets contain typical values only, and no guarantee is given for these values.

[Gate trigger voltage V GT and Gate trigger current I GT ]Minimum values for square-wave triggering pulses lasting longer than 100 μs or for d.c. with 6 V applied to the main terminals. These values will increase if the triggering pul-ses last for less than 100 μs. For 10 μs, for instance, the gate trigger current I GT would increase at least by a factor of between 1.4 and 2. It′s recommended that firing circuits should therefore be arranged in such as way that trigger current values are 4 to 5 times larger than I GT . If the thyri-stor is loaded with reverse blocking voltage, no trigger voltage may be applied to the gate in order to avoid a non-permissible increase in off-state power losses and the for-mation of hot spots on the thyristor chip.[Gate non-trigger voltage V GD und Non-trigger current I GD ]

These trigger voltage and current values will not cause the thyristor to fire within the permissible operating tempera-ture range. Inductive or capacitive interference in the trig-gering circuits must be kept below these values.[Time definitions for triggering]

Fig. 2 shows the characteristics of gate trigger signal V G and anode-cathode voltage V

AK which define the time intervals for the triggering process.

Fig. 2 Time definitions for thyristor triggering

[Gate-controlled delay time t gd ]: Time interval between the start of a triggering pulse and the point at which the anode-cathode voltage falls to 90 % of its starting value.The datasheet specifies a typical value which is applica-ble, provided the following conditions are fulfilled:

- Square-wave gate pulse, duration 100 μs - Anode-cathode starting voltage 0.5 V DRM

- On-state current after firing approx. 0.1 I TAV @ 85 °C - Junction temperature during firing approx. 25 °C [Gate controlled rise time t gr ]: Period within which the anode-cathode voltage falls from 90 % to 10 % of its star-ting value during firing.

[Gate current pulse duration t gt ]: The sum of the gate controlled delay time t gd and the gate controlled rise time t gr .

Thermal resistances R th(x-y) and thermal impedances Z th(x-y)

For SEMIPACK ? modules, thermal resistances/impedan-ces are given for the heat flow between points "x" and "y".The indices uses are as follows:j - junction c - case/baseplate s - sink

r - reference point a - ambient

The contact thermal resistance case to heatsink R th(c-s)applies provided the assembly instructions are followed. In such cases, the given dependences of the internal thermal resistance junction to case R th(j-c) on the current waveform

and the current flow angle should take into account any deviations from the maximum instantaneous value of the mean junction temperature calculated. The values given in the datasheet tables apply to sinusoidal half waves only. Values for other current wave forms can be taken from Fig.7 of the datasheet.

The thermal resistance junction to ambient R th(j-a) to be used in Fig. 1 and Fig.11 of the datasheet comprises the following components:

R th(j-a) = R th(j-c) + R th(c-s) + N * R th(s-a)

where N: the number of thyristors or diodes operating simultaneously on one heat sink.

The thermal resistance R th(s-a) of the heat sink decreases as the following items increase: power dissipation, the cooling air flow rate, the number of SEMIPACK? modules mounted and the distance between the individual modu-les.

The transient thermal impedances in the SEMIPACK?modules Z th(j-c) and Z th(j-s) are shown in the diagrams shown in Fig. 6 and Fig 14 of the datasheets as a function of the time t. For times > 1 s, the transient thermal impe-dance Z th(s-a) of the heat sink must be added to this in order to calculate the total thermal impedance. For this purpose, the datasheets for SEMIKRON heat sinks normally con-tain a diagram illustrating the given thermal impedance Z th(s-a) or Z th(c-a) as a function of the time t. When several components are being mounted on one heat sink, in order to calculate the transient thermal impedance of one com-ponent, the thermal heat sink impedance must be multip-lied by the total number of components N. Temperatures

The most important referential value for calculating limiting values is the maximum permissible virtual junction tempe-rature T vj. At most in the event of a circuit fault (e.g. when a fuse is activated) may this value be exceeded briefly (cf. "Surge on-state current"). Another important reference point for the permissible current capability is the case tem-perature T c. In SEMIPACK? modules, the measuring point for T c (Reference point/Reference temperature T cref) is the hottest point of the baseplate beneath the hottest chip, measured through a hole in the heat sink. The heat sink temperature T s is of particular interest for defining power dissipation and heat sink. In SEMIPACK? modules the measuring point for T s (Reference point/Reference tempe-rature T sref) is the hottest point of the heat sink besides the baseplate, measured from above on the side wall of the module (cf. also IEC60747-1, Am. 1 to Am. 3 and IEC60747-15 cls.7.4.3).

The permissible ambient conditions without current or voltage stress are described, among other things, by the maximum permissible storage temperature T stg. The para-meter T stg is also the maximum permissible case tempera-ture which must not be exceeded as a result of internal or external temperature rise.Mechanical limiting values

The limiting values for mechanical load are specified in the datasheets, e.g.:

Mn : Max. tightening torque for terminal screws and faste-

ners

Ft : Max. permissible mounting force (pressure force) for

capsule devices

a : Max. permissible amplitude of vibration or shock acce-

leration in x, y and z direction.

If SEMIPACK? modules with no hard mould are to be used

in rotating applications, the soft mould mass may come

away and leak. Please contact SEMIKRON for there appli-

cations.

Application Notes

The terms in [ ] apply solely to thyristors.

Voltage class selection

The table below contains the recommended voltage class allocations for the repetitive peak reverse voltages V RRM,

[V DRM ] of SEMIPACK? modules and (sample) rated AC

input voltage V VN (samples).

As detailed in the technical explanations, the maximum permissible value for direct reverse voltages (continuous

duty) across diodes (V R) [or thyristors (V D, V R)] in statio-

nary operation is 0.7 V RRM [0.7 V DRM].

Overvoltage protection

RC snubber circuits are often connected in parallel to the

diode [thyristor] to provide protection from transient over-

voltage, although in some cases varistors are used. Due

to the RC circuit the rate of rise of voltage is limited during commutation, which reduces the peak voltages across the

circuit inductors.

For higher circuit requirements, the RC circuit design

should first be tested experimentally. The table below con-Rated AC voltage L-L Recommended peak

reverse voltage

V VN / V V RRM, [V DRM] / V

60200

125 400

250 800

3801200

400 1400

4401400

4601600

500 1600

5751800

6602200

690 2200

tains sample resistance and capacitance values recom-mended by SEMIKRON for standard line applications SEMIPACK ? Modules

Over-current and short circuit protection

If short circuit protection is required for the diodes, [thyri-stors], (ultra fast) semiconductor fuses are used. These are to be dimensioned on the basis of the forward current and i 2t value.

Other types of protection for high current circuits are, for example, fuses which isolate damaged diodes [thyristors]from the parallel connections. To protect components from statically non-permissible high overcurrents, it is possible to use magnetic or thermal overcurrent circuit breakers or temperature sensors on the heat sinks, although these do not detect dynamic overload within a circuit. For this rea-son, temperature sensors are used mainly with forced air cooling in order to prevent damage to the diodes [thyri-stors] in the event of fan failure.Permissible overcurrents

The permissible forward currents for short-time or interme-diate operation, as well as for frequencies below 40 Hz are to be calculated on the basis of the transient thermal impe-dance or the thermal impedance under pulse conditions so that the virtual junction temperature T vj does not exceed the maximum permissible value at any time.Assembly instructions

In order to ensure good thermal contact and to obtain the thermal contact resistance values specified in the datas-heets, the contact surface of the heat sink must be clean and free from dust particles, as well as fulfilling the follo-wing mechanical specifications:?Unevenness: < 20 μm over a distance of 100 mm ?

Roughness R Z : < 10 μm

Before assembly onto the heat sink, the module baseplate or the contact surface of the heat sink is to be evenly coated with a thin layer (approx. 50 μm) of a thermal com-V VN ≤ 250V V VN ≤ 400V V VN ≤ 500V V VN ≤ 660V

SKK_15 (27)

0.22μF 68Ω/ 6W 0.22μF 68Ω/ 6W

0.1μF 100Ω/10W

- -SKK_42...1060.22μF 33Ω/ 10W 0.22μF 47Ω/ 10W 0.1μF 68Ω/ 10W 0.1μF 100Ω/

10W

SKK_122...260 (on P3 heat

sink)

0.22μF

33Ω/ 10W 0.22μF 47Ω/ 10W 0.1μF 68Ω/ 10W 0.1μF 100Ω/

10W SKK_122 (260)

(higher currents)

0.47μF

33Ω/ 25W 0.47μF 33Ω/ 25W 0.22μF 47Ω/ 25W 0.22μF 68Ω/ 50W pound such as Wacker-Chemie P 12 (silicon-based, 30 g tube: SEMIKRON ID No. 30106620). For even distribution we recommend using a hard rubber roller or a silk screen process. The SEMIPACK ? modules should be secured with the following DIN steel screws: M4 (SEMIPACK ? 0),M5 (SEMIPACK ? 1, 2, 4) or M6 (SEMIPACK ? 3, 5) (pro-perty class 8.8) in combination with suitable washers and spring lock washers or combination screws. When doing so, the torque value specified in the datasheet must be observed. The screws must be tightened in diagonal order with equal torque in several steps until the specified torque value M1 has been reached. We further recommend that the screws are retightened according to the given torque,value following a period of a few hours, as part of the heat sink compound may spread under the mounting pressure.For the electrical terminals, suitable screws, washers and spring lock washers or combination screws are to be used.We also recommend using contact rails for the power ter-minals in SEMIPACK ? modules. If connecting leads are used, suitable steps must be taken to prevent non-permis-sible tensile and shear stress on the power connections.Furthermore, the maximum and minimum thread reaches,which can be taken from the module drawings (see data sheets), and the permissible tightening torque values M2must be observed. When soldering flat plug connectors (using a grounded solder tool), a soldering temperature of T solder = 245 ± 5°C / <20sec. must be observed.All gate control cables must be kept as short as possible in order to minimise stray inductance and prevent electro-magnetic interference and oscillation from occurring. In the case of SEMIPACK ? thyristor modules with auxiliary cathode terminals, the gate and cathode control leads are to be twisted together, as far as possible.

The tables below contain details on the contents of the mounting accessory kits for the respective SEMIPACK ?module (SEMIPACK ? 1...4).Contents

SEMIPACK ? 1

for 12 modules SEMIKRON ID No.33403900

Mounting screws 24 pcs M5x18 Z4-1 DIN 7984-8.8

Connection screws 36 pcs M5x10 Z4-1 DIN 7985-4.8

Plain washers

Part of combi-screw Spring lock washers Part of combi-screw

Push-on receptacles 48 pcs B2.8-1 for connec-tors 2.8x0.8mm Insulating sleeves

48 pcs 6x3.5x20

Contents SEMIPACK ? 2

for 8 modules

SEMIKRON ID No.33404000Mounting screws 16 pcs M5x18 Z4-1 DIN

7984-8.8

Connection screws24 pcs M6x12 Z4-1 DIN

7985-8.8

Push-on receptacles32 pcs A2.8-0.25 for con-

nectors 2.8x0.8mm Insulating caps Left and right, 8 pcs each

15x9.8x6.8

Contents SEMIPACK? 3

for 3 modules SEMIKRON ID No.33404100

Mounting screws12 pcs M5x18 Z4-1 DIN

7984-8.8

Connection screws9 pcs M8x16 Z4-1 DIN 933-

8.8

Plain washers Part of combi-screw Spring lock washers Part of combi-screw

Push-on receptacles12 pcs A2.8-0.25 for con-

nectors 2.8x0.8mm Insulating caps Left and right, 3 pcs each

15x9.8x6.8

Contents SEMIPACK? 4

for 3 modules SEMIKRON ID No.33404500

Mounting screws12 pcs M5x18 Z4-1 DIN

7984-8.8

Connection screws Threaded pin, 6 pcs

M10x50 DIN 916-45 H Spring lock washers 6 x conical spring washers

A10 DIN 6796

Hex nut 6 pcs M10 DIN 934

Push-on receptacles 6 pcs A2.8-0.25 for connec-

tors 2.8x0.8 mm Insulating caps 3 pcs right SEMIPACK?: Thyristor/Diode Modules with Thyristor and Diodes for Line Application

Type Designation System

n o p q r s t

SK K T430/22E H4

n SEMIKRON component

o Internal connection

E: Single element

K: followed by D, H, L or T = Series connection with centre tap (phase leg)

followed by Q = Anti parallel connection (AC controller) followed by E = Single diode

M: Centre-tapped connection, common cathode

N: Centre-tapped connection, common anode

p Functional elements and configuration

D: All elements diodes

E: Single diode

H: Thyristor (cathode-side) + diode

L: Thyristor (anode-side) + diode

Q: Anti-parallel thyristors

T: All elements thyristors

q Rated current (I TAV [A])

r Voltage class (V RRM [V]/100)

s dv/dt class

D: 500 V/μs

E: 1000 V/μs

t Option, where applicable, e.g. H4 = V isol 4,8 kV/1s Captions of the Figures

SEMIPACK? thyristor modules

Fig. 1

Left: Power dissipation P TAV as a function of the mean on-state current I TAV for d.c. (cont.), sinusoidal half waves (sin. 180) and square-wave pulses (rec. 15...180) for a sin-gle thyristor (typical values)

Right: Max. permissible power dissipation P TAV as a function of the ambient temperature T a (temperature of the cooling air flow) for the total thermal resistances (junction to ambient air) R th(j-a) (typical values)

Fig. 2

Left: Total power dissipation P TOT of a SEMIPACK?module used in an a.c. controller application (W1C a.c.

converter) as a function of the maximum rated rms current I RMS at full conduction angle (typical values)

Right: Max. permissible power dissipation P TOT and resul-tant case temperature T c as a function of the ambient tem-perature T a; Parameter: Heatsink thermal resistance case to ambient air R th(c-a) (including the total contact thermal resistance 1/2 R th(c-s) between a SEMIPACK? module and the heat sink. For the power dissipation given on the l.h.s vertical, the case temperatures given on the r.h.s. vertical are permissible

Fig. 3

Left: Total power dissipation P TOT of 2 SEMIPACK?modules in a two-pulse bridge connection (B2C) as a function of the output direct current I D at full conduction angle for resistive (R) and inductive (L) load (typical values)

Right: Max. permissible power dissipation P TOT and resul-tant case temperature T c as a function of the ambient tem-perature T a; Parameter: Heatsink thermal resistance case to ambient air R th(c-a) (including the total contact thermal resistance 1/4 R th(c-s) between a SEMIPACK? module and the heat sink. For the power dissipation given on the l.h.s vertical, the case temperatures given on the r.h.s. vertical are permissible

Fig. 4

Left: Total power dissipation P TOT of 3 SEMIPACK?modules in a six-pulse bridge connection (B6C) or in an a.c. controller connection (W3C) as a function of the direct output current I D at full conduction angle resistive (R) and inductive (L) load (typical values)

Right: Max. permissible power dissipation P TOT and resul-tant case temperature T c as a function of the ambient tem-perature T a; Parameter: Heatsink thermal resistance case to ambient air R th(c-a) (including the total contact thermal resistance 1/6 R th(c-s) of a SEMIPACK? module and the heat sink. For the power dissipation given on the l.h.s ver-tical, the case temperatures given on the r.h.s. vertical are permissible

Fig. 5 Typical recovery charge Q rr for the max. permissible junction temperature as a function of the rate of fall of the forward current -di T/dt during turn-off, Parameter: Peak on-state current I TM before commutation

Fig. 6 Transient thermal impedances junction to case Z th(j-

c) and junction to sink Z th(j-s) for d.c. as a function of the

time t elapsed after a step change in power dissipation, for a single thyristor

Fig. 7 Forward characteristics: on-state voltage V T as a function of the on-state current I T; typical and maximum values for T vj = 25 °C and T vjmax

Fig. 8 Surge current characteristics: Ratio of permissible overload on-state current I T(OV) for 10 ms to surge on-state current I TSM, shown as a function of the load period t; Para-meter: Ratio V R / V RRM of the reverse voltage V R between the sinusoidal half waves, to the peak reverse voltage V RRM Fig. 9 Gate voltage V G as a function of the gate current I G, indicating the regions of possible (BMZ) and certain (BSZ) triggering for various virtual junction temperatures T vj. The current and voltage values of the triggering pulses must lie within the range of certain (BSZ) triggering, but the peak pulse power P G must not exceed that given for the pulse duration t p. Curve 20 V; 20 Ω is the output characteristic of suitable trigger equipment.

SEMIPACK? diode modules

Fig. 11

Left: Mean power dissipation P FAV as a function of the mean continuous forward current I FAV for d.c. (cont.), sinu-soidal half waves (sin. 180) and square-wave pulses (rec.

15...180) for a single diode (typical values)

Right: Max. permissible power dissipation P FAV as a function of the ambient temperature T a (temperature of the cooling air flow) for different total thermal resistances (junction to ambient air) R thja (typical values)

Fig. 12

Left: Total power dissipation P TOT of 2 SEMIPACK?modules in a two-pulse bridge connection (B2C) as a function of the output direct current I D (typical values) Right: Max. permissible power dissipation P TOT and resul-tant case temperature T c as a function of the ambient tem-perature T a; Parameter: Heatsink thermal resistance case to ambient air R th(c-a) (including the total contact thermal resistance 1/4 R th(c-s) between a SEMIPACK? module and the heat sink. For the power dissipation given on the l.h.s vertical, the case temperatures given on the r.h.s. vertical are permissible

Fig. 13

Left: Total power dissipation P TOT of 3 SEMIPACK?modules in a six-pulse bridge connection (B6C) as a function of the direct output current I D (typical values) Right: Max. permissible power dissipation P TOT and resul-tant case temperature T c as a function of the ambient tem-perature T a; Parameter: Heatsink thermal resistance case to ambient air R th(c-a) (including the total contact thermal resistance 1/6 R th(c-s) between a SEMIPACK? module and the heat sink. For the power dissipation given on the l.h.s vertical, the case temperatures given on the r.h.s. vertical are permissible

Fig. 14 Transient thermal impedances junction to case Z th(j-c) and junction to heat sink Z th(j-s) of a single diode for d.c. as a function of the time t elapsed after a step change in power dissipation

Fig. 15 Forward characteristics: forward voltage V F as a function of the forward current I F; typical and maximum values for T vj = 25 °C and T vjmax

Fig. 16 Surge current characteristics: Ratio of permissible overload on-state current I T(OV) to surge on-state current I TSM for 10 ms as a function of the load period t; Parameter: Ratio V R / V RRM of the reverse voltage V R between the sinusoidal half waves, to the peak reverse voltage V RRM

SEMIPACK? Fast Diode Modules

Type Designation System

n o p q r s

SK K D150F12

n SEMIKRON component

o Internal connection

K: followed by D = Series connection with centre tap (phase leg)

followed by E = Single diode

M: Centre-type connection, cathode-side

N: Centre-type connection, anode-side

p Functional elements and configuration

D: All elements diodes

E: Single diode

q Rated current (I TAV [A])

r Designation of diode chip technology

E: Fast Epitaxial diode chips

F: Fast diode chips with heavy metal diffusion or fast CAL diode chips

M: Medium-fast diode chips with heavy metal diffusion

s Voltage class (V RRM [V]/100)

Captions of the Figures

Fig. 1 Typical recovery charge Q rr for T vj = 125 °C and square-wave current as a function of the rate of fall of the forward current -di F/dt; Parameter: Peak forward current I FM before commutation. The following applies to sinusoi-dal half waves: -di F /dt = 3 * I FM / t p

Fig. 2 Typical peak reverse recovery current I RM as a function of the rate of fall of the forward current - di F/dt; Parameter: Peak forward current I FM before commutation. The following applies to sinusoidal half waves: - di F/dt = 3 * I FM / t p

Fig. 3 Transient thermal impedance Z th as a function of the time t elapsed after a step change in power dissipation; Z th(j-c): Transient thermal impedance junction to case, Z th(j-s)

: Transient thermal impedance junction to heat sink Fig. 4 Forward characteristics: forward voltage V F as a function of the forward current I F; typical and maximum values for T vj = 25°C and T vjmax

Fig. 5 Surge current characteristics: Ratio of permissible overload on-state current I F(OV) to surge on-state current I FSM for 10 ms as a function of the load period t; Parameter: Ratio V R / V RRM of the reverse voltage V R, which lies bet-ween the given sinusoidal half waves, to the peak reverse voltage V RRM Fig. 6 Energy dissipation during reverse recovery E rr as a function of the forward current I F; Parameter: Rate of fall of the forward current - di F/dt (typical values)

几种特殊的晶闸管

特殊的晶闸管 双向晶闸管TRIAC：TRIode AC semiconductor switch 双向可控硅为什么称为“TRIAC”? 三端：TRIode(取前三个字母) 交流半导体开关：ACsemiconductor switch (取前两个字母)

以上两组名词组合成“TRIAC” 中文译意“三端双向可控硅开关”。 由此可见“TRIAC”是双向可控硅的统称。 双向：Bi-directional(取第一个字母) 控制：Controlled(取第一个字母) 整流器：Rectifier(取第一个字母) 再由这三组英文名词的首个字母组合而成:“BCR”中文译意:双向可控硅。以“BCR”来命名双向可控硅的典型厂家如日本三菱，如:BCR1AM-12、BCR8KM、BCR08AM等等。 双向：Bi-directional(取第一个字母) 三端：Triode(取第一个字母) 由以上两组单词组合成“BT”，也是对双向可控硅产品的型号命名，典型的生产商如：意法ST公司、荷兰飞利浦-Philips公司，均以此来命名双向可控硅。 代表型号如：PHILIPS的BT131-600D、BT134-600E、BT136-600E、BT138-600E、BT139-600E、等等。这些都是四象限/非绝缘型/双向可控硅； Philips公司的产品型号前缀为“BTA”字头的，通常是指三象限的双向可控硅。 而意法ST公司，则以“BT”字母为前缀来命名元件的型号并且在“BT”后加“A”或“B”来表示绝缘与非绝缘组合成：“BTA”、“BTB”系列的双向可控硅型号，如： 三象限/绝缘型/双向可控硅:BTA06-600C、BTA12-600B、BTA16-600B、BTA41-600B等等； 四象限/非绝缘/双向可控硅:BTB06-600C、BTB12-600B、BTB16-600B、BTB41-600B等等； ST公司所有产品型号的后缀字母(型号最后一个字母)带“W”的，均为“三象限双向可控硅”。如“BW”、“CW”、“SW”、“TW”；代表型号如:BTB12-600BW、BTA26-700CW、BTA08-600SW、、、、等等。 至于型号后缀字母的触发电流，各个厂家的代表含义如下：PHILIPS公司：D=5mA，E=10mA，C=15mA，F=25mA，G=50mA，R=200uA或5mA， 型号没有后缀字母之触发电流，通常为25-35mA； PHILIPS公司的触发电流代表字母没有统一的定义，以产品的封装不同而不同。 意法ST公司：TW=5mA，SW=10mA，CW=35mA，BW=50mA，C=25mA，B=50mA，H=15mA，T=15mA，注意：以上触发电流均有一个上下起始误差范围，产品PDF文件中均有详细说明 一般分为最小值/典型值/最大值，而非“=”一个参数值

双向可控硅选型表要点

双向可控硅为什么称为“TRIAC”? 三端：TRIode(取前三个字母) 交流半导体开关：AC-semiconductor switch(取前两个字母) 以上两组名词组合成“TRIAC”，或“TRIACs”中文译意“三端双向可控硅开关”。 由此可见“TRIAC”是双向可控硅的统称。 另: 双向：Bi-directional(取第一个字母) 控制：Controlled (取第一个字母) 整流器：Rectifier (取第一个字母) 再由这三组英文名词的首个字母组合而成：“BCR”，中文译意：双向可控硅。 以“BCR”来命名双向可控硅的典型厂家如日本三菱，如：BCR1AM-12、BCR8KM、BCR08AM 等等。 -------------- 双向：Bi-directional (取第一个字母) 三端：Triode (取第一个字母) 由以上两组单词组合成“BT”，也是对双向可控硅产品的型号命名,典型的生产商如：意法ST公司、荷兰飞利浦-Philips公司，均以此来命名双向可控硅. 代表型号如：PHILIPS 的BT131-600D、BT134-600E、BT136-600E、BT138-600E、BT139-600E、、等。这些都是四象限/非绝缘型/双向可控硅；Philips公司的产品型号前缀为“BTA”字头的，通常是指 三象限的双向可控硅。三象限的品种主要应用于电机电路、三相市电输入的电路、承受的瞬间浪涌电流高。 ------------------- 而意法ST公司，则以“BT”字母为前缀来命名元件的型号，并且在“BT”后加“A”或“B”来表示绝缘与非绝缘。组成：“BTA”、“BTB”系列的双向可控硅型号，如： 四象限、绝缘型、双向可控硅：BTA06-600C、BTA08-600C、BTA10-600B、BTA12-600B、BTA16-600B、BTA41-600、、、等等； 四象限、非绝缘、双向可控硅：BTB06-600C、BTB08-600C、BTB10-600B、BTB12-600B、BTB16-600B、BTB41-600、、、等等； ST公司所有产品型号的后缀字母(型号最后一个字母)带“W”的，均为“三象限双向可控硅”。如“BW”、“CW”、“SW”、“TW”； 代表型号如：BTB12-600BW、BTA26-700CW、BTA08-600SW、、、、等等。 至于型号后缀字母的触发电流，各个厂家的代表含义如下： PHILIPS公司：D=5mA，E=10mA，C=15mA，F=25mA，G=50mA，R=200uA或5mA，型号没有后缀字母之触发电流，通常为25-35mA； PHILIPS公司的触发电流代表字母没有统一的定义，以产品的封装不同而不同。 意法ST公司：TW=5mA，SW=10mA，CW=35mA，BW=50mA，C=25mA，B=50mA，H=15mA，T=15mA， 注意：以上触发电流均有一个上下起始误差范围，产品PDF文件中均有详细说明，一般分为最小值/典型值/最大值，而非“=”一个参数值。 对于产品类别、品种系列的名词国际上通用的命名有:

单向双向可控硅触发电路设计原理

单向/双向可控硅触发电路设计原理 1，可以用直流触发可控硅装置。 2，电压有效值等于U等于开方{（电流有效值除以2派的值乘以SIN二倍电阻）加上(派减去电阻的差除以派）}。 3,电流等于电压除以（电压波形的非正弦波幅值半波整流的两倍值）。 4，回答完毕。 触摸式台灯的控制原理 这种台灯的主要优点是没有开关，使用时通过人体触摸，完成开启、调光、关闭动作，给使用带来方便。 一、电路设计原理 人体感应的信号加在电源电路可控硅的触发极，使电路导通，并给负载——灯泡或灯管供电，使灯按弱光、中光、强光、关闭4个状态动作，达到调光的目的。电路见图1，该电路的关键器件是采用CMOS工艺制造的集成电路BA210l。 二、降压稳压电路 由R3、VDl、VD4、C4组成。输出9V直流电，供给BA2101，由③⑦脚引入。 三、触发电路 由触发电极M将人体的感应信号，经c3、R8、R7送至④脚的sP端，经处理后，由⑥脚输出触发信号，经cl、R1加至可控硅VS的G极，VS导通，电灯H点亮。第二次触摸，可改变触发脉冲前沿的到达时间，而使电灯亮度改变。反复触摸，可按弱光、中光、强光和关闭四个动作状态循环，达到调节亮度的目的。可控硅VS在动作中其导通角分别为120度、86度、17度。 四、辅助电路 VD2和vD3为保护集成电路而设。防止触摸信号过大而遭破坏。C3为隔离安全电容。R4为取得同步交流信号而设。R5为外接振荡电阻。 五、使用中经常出现的故障 (1)由震动引发的故障。触摸只需轻轻触及即可。但在家庭使用中触击的强度因人而异，小孩去触摸可能是重重的一拳。性格刚烈的人去触摸，可能引起剧烈震动。因此经常出现灯泡断丝。 (2)集成块焊脚由震动而产生脱焊。如③脚脱焊，使电源切断而停止工作；④、⑥脚脱焊，使触摸信号中断，都会引起灯泡不亮。因此要检查集成块各脚是否脱焊。 (3)可控硅VS一般采用MAC94A4型双向可控硅，由于反复触发，或意外大信号触发，会引起可控硅击穿而停止工作。 触摸式台灯的控制原理 这种台灯的主要优点是没有开关，使用时通过人体触摸，完成开启、调光、关闭动作，给使用带来方便。 一、电路设计原理 人体感应的信号加在电源电路可控硅的触发极，使电路导通，并给负载——灯泡或灯管供电，使灯按弱光、中光、强光、关闭4个状态动作，达到调光的目的。电路见图1，该电路的关键器件是采用CMOS工艺制造的集成电路BA210l。 二、降压稳压电路 由R3、VDl、VD4、C4组成。输出9V直流电，供给BA2101，由③⑦脚引入。 三、触发电路 由触发电极M将人体的感应信号，经c3、R8、R7送至④脚的sP端，经处理后，由⑥脚输出触发信号，

可控硅电路选型分析

一、可控硅半导体结构及其工作原理：以单向可控硅为例 晶闸管(Thyristor)又叫可控硅T在工作过程中，它的阳极A和阴极K与电源和负载连接，组成晶闸管的主电路，晶闸管的门极G和阴极K与控制晶闸管的装置连接，组成晶闸管的控制电路。 晶闸管的工作条件： 1. 晶闸管承受反向阳极电压时，不管门极承受和种电压，晶闸管都处于关短状态。 2. 晶闸管承受正向阳极电压时，仅在门极承受正向电压的情况下晶闸管才导通。 3. 晶闸管在导通情况下，只要有一定的正向阳极电压，不论门极电压如何，晶闸管保持导通，即晶闸管导通后，门极失去作用。 4. 晶闸管在导通情况下，当主回路电压（或电流）减小到接近于零时，晶闸管关断。 晶闸管是四层三端器件，它有J1、J2、J3三个PN结图1，可以把它中间的NP分成两部分，构成一个PNP型三极管和一个NPN型三极管的复合管图2 当晶闸管承受正向阳极电压时，为使晶闸管导铜，必须使承受反向电压的PN结J2失去阻挡作用。图2中每个晶体管的集电极电流同时就是另一个晶体管的基极电流。因此，两个互相复合的晶体管电路，当有足够的门机电流Ig流入时，就会形成强烈的正反馈，造成两晶体管饱和导通，晶体管饱和导通。 设PNP管和NPN管的集电极电流相应为Ic1和Ic2；发射极电流相应为Ia和Ik；电流放大系数相应为a1=Ic1/Ia和a2=Ic2/Ik，设流过J2结的反相漏电电流为Ic0, 晶闸管的阳极电流等于两管的集电极电流和漏电流的总和： Ia=Ic1+Ic2+Ic0 或Ia=a1Ia+a2Ik+Ic0 若门极电流为Ig,则晶闸管阴极电流为Ik=Ia+Ig

从而可以得出晶闸管阳极电流为：I=(Ic0+Iga2)/（1-（a1+a2））（1—1）式 硅PNP管和硅NPN管相应的电流放大系数a1和a2随其发射极电流的改变而急剧变化如图3所示。 当晶闸管承受正向阳极电压，而门极未受电压的情况下，式（1—1）中，Ig=0,(a1+a2)很小，故晶闸管的阳极电流Ia≈Ic0 晶闸关处于正向阻断状态。当晶闸管在正向阳极电压下，从门极G流入电流Ig,由于足够大的Ig流经NPN管的发射结，从而提高起点流放大系数a2,产生足够大的极电极电流Ic2流过PNP管的发射结，并提高了PNP管的电流放大系数a1,产生更大的极电极电流Ic1流经NPN 管的发射结。这样强烈的正反馈过程迅速进行。从图3，当a1和a2随发射极电流增加而（a1+a2）≈1时，式（1—1）中的分母1-（a1+a2）≈0,因此提高了晶闸管的阳极电流Ia.这时，流过晶闸管的电流完全由主回路的电压和回路电阻决定。晶闸管已处于正向导通状态。 式（1—1）中，在晶闸管导通后，1-（a1+a2）≈0,即使此时门极电流Ig=0,晶闸管仍能保持原来的阳极电流Ia而继续导通。晶闸管在导通后，门极已失去作用。 在晶闸管导通后，如果不断的减小电源电压或增大回路电阻，使阳极电流Ia减小到维持电流IH 以下时，由于a1和a1迅速下降，当1-（a1+a2）≈0时，晶闸管恢复阻断状态。 二、可控硅种类 按照其工作特性又可分单向可控硅(SCR)、双向可控硅(TRIAC)。其中双向可控硅又分四象限双向可控硅和三象限双向可控硅。同时可控硅又有绝缘与非绝缘两大类，如ST的可控硅用BT名称后的“A”、与“B”来区分绝缘与非绝缘。 1、单向可控硅SCR：全称Semiconductor Controlled Rectifier(半导体整流控制器) 图2-1 2、双向可控硅TRIAC：全称Triode ACSemiconductor Switch(三端双向可控硅开关)，也有厂商使用Bi-directional Controlled Rectifier(BCR)来表示双向可控硅。

MTC135A1600V可控硅模块

中国·杭州国晶电子科技有限公司https://www.sodocs.net/doc/dc2389843.html,

中国·杭州国晶电子科技有限公司https://www.sodocs.net/doc/dc2389843.html,

中国·杭州国晶电子科技有限公司 https://www.sodocs.net/doc/dc2389843.html, 模块典型电路 电联结形式

（右图） 模块外型图、安装图 M225M234 使用说明： 一、使用条件及注意事项： 1、使用环境应无剧烈振动和冲击，环境介质中应无腐蚀金属和破坏绝缘的杂质和气氛。 2、模块管芯工作结温：可控硅为-40℃∽125℃；环境温度不得高于40℃；环境湿度小于86%。 3、模块在使用前一定要加装散热器，散热器的选配见下节。散热可采用自然冷却、强迫风冷或水冷。强迫风冷时，风速应大于６米∕秒。 二、安装注意事项： 1、由于MTC可控硅模块是绝缘型（即模块接线柱对铜底板之间的绝缘耐压大于2.5KV有效值），因此可以把多个模块安装在同一散热器上，或装置的接地外壳上。 2、散热器安装表面应平整、光滑，不能有划痕、磕碰和杂物。散热器表面光洁度应小于10μm。模块安装到散热器上时，在它们的接触面之间应涂一层很薄的导热硅脂。涂脂前，用细砂纸把散热器接触面的氧化层去掉，然后用无水乙醇把表面擦干净，使接触良好，以减少热阻。模块紧固到散热器表面时，采用M5或M6螺钉和弹簧垫圈，并以4NM力矩紧固螺钉 中国·杭州国晶电子科技有限公司https://www.sodocs.net/doc/dc2389843.html,

与模块主电极的连线应采用铜排，并有光滑平整的接触面，使接触良好。模块工作３小时后，各个螺钉须再次紧固一遍。 模块散热器选择 用户选配散热器时，必须考虑以下因素： ①模块工作电流大小，以决定所需散热面积； ②使用环境，据此可以确定采取什么冷却方式——自然冷却、强迫风冷、还是水冷； ③装置的外形、体积、给散热器预留空间的大小，据此可以确定采用什么形状的散热器。一般而论，大多数用户会选择铝型材散热器。为方便用户，对我公司生产的各类模块，在特性参数表中都给出了所需散热面积。此面积是在模块满负荷工作且在强迫风冷时的参考值。下面给出散热器长度的计算公式： 模块所需散热面积＝（散热器周长）×（散热器长度）＋（截面积）×２ 其中，模块所需散热面积为模块特性参数表中给出的参考值，散热器周长、截面积可以在散热器厂家样本中查到，散热器长度为待求量。 郑重声明：目前市场上充斥着各种劣质散热器，请在购买是注意鉴别，如因使用劣质散热器造成模块损坏或其他严重后果，我公司概不负责。 中国·杭州国晶电子科技有限公司https://www.sodocs.net/doc/dc2389843.html,

可控硅-晶闸管的几种典型应用电路

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晶闸管的主要参数

晶闸管的主要参数 作者：jesse 文章来源：本站原创点击数：273 更新时间：2007-12-6 ★★★【字体：小大】 晶闸管的主要电参数有正向转折电压VBO、正向平均漏电流IFL、反向漏电流IRL、断态重复峰值电压V DRM、反向重复峰值电压VRRM、正向平均压降VF、通态平均电流IT、门极触发电压VG、门极触发电流IG、门极反向电压和维持电流IH等。 （一）正向转折电压VBO 晶闸管的正向转折电压VBO是指在额定结温为100℃且门极（G）开路的条件下，在其阳极（A）与阴极（K）之间加正弦半波正向电压、使其由关断状态转变为导通状态时所对应的峰值电压。 （二）断态重复峰值电压VDRM 断态重复峰值电压VDRM，是指晶闸管在正向阻断时，允许加在A、K（或T1、T2）极间最大的峰值电压。此电压约为正向转折电压减去100V后的电压值。 （三）通态平均电流IT 通态平均电流IT，是指在规定环境温度和标准散热条件下，晶闸管正常工作时A、K（或T1、T2）极间所允许通过电流的平均值。（四）反向击穿电压VBR 反向击穿电压是指在额定结温下，晶闸管阳极与阴极之间施加正弦半波反向电压，当其反向漏电电流急剧增加时反对应的峰值电压。 （五）反向重复峰值电压VRRM 反向重复峰值电压VRRM，是指晶闸管在门极G断路时，允许加在A、K极间的最大反向峰值电压。此

电压约为反向击穿电压减去100V后的峰值电压。 （六）正向平均电压降VF 正向平均电压降VF也称通态平均电压或通态压降VT，是指在规定环境温度和标准散热条件下，当通过晶闸管的电流为额定电流时，其阳极A与阴极K之间电压降的平均值，通常为0.4~1.2V。 （七）门极触发电压VGT 门极触发VGT，是指在规定的环境温度和晶闸管阳极与阴极之间为一定值正向电压的条件下，使晶闸管从阻断状态转变为导通状态所需要的最小门极直流电压，一般为1.5V左右。 (八)门极触发电流IGT 门极触发电流IGT，是指在规定环境温度和晶闸管阳极与阴极之间为一定值电压的条件下，使晶闸管从阻断状态转变为导通状态所需要的最小门极直流电流。 （九）门极反向电压 门极反向电压是指晶闸管门极上所加的额定电压，一般不超过10V。 （十）维持电流IH 维持电流IH是指维持晶闸管导通的最小电流。当正向电流小于IH时，导通的晶闸管会自动关断。（十一）断态重复峰值电流IDR 断态重复峰值电流IDR，是指晶闸管在断态下的正向最大平均漏电电流值，一般小于100μA （十二）反向重复峰值电流IRRM 反向重复峰值电流IRRM，是指晶闸管在关断状态下的反向最大漏电电流值，一般小于100μA。

MTC110A1600V可控硅模块

中国·杭州国晶电子科技有限公司 https://www.sodocs.net/doc/dc2389843.html, 符号 参数 测试条件 结温 Tj （℃） 参数值 单位 最小 典型 最大 I T(A V) 通态平均电流 180°正弦半波，50HZ 单面散热，T c =85℃ 125 110 A I T(RMS) 方均根电流 125 173 A V DRM V RRM 断态重复峰值电压 反向重复峰值电压 V DRM &V RRM tp=10ms V D s M &V RsM = V DRM &V RRM +200V 125 600 1600 1800 V I DRM I RRM 断态重复峰值电流 反向重复峰值电流 V DM = V DRM V RM = V RRM 125 12 mA I TSM 通态不重复浪涌电流 10ms 底宽，正弦半波 125 2.40 KA I 2t 浪涌电流平均时间积 V R =0.6 V RRM 125 29 103A 2S V TO 门槛电压 0.8 V R T 斜率电阻 125 2.29 m Ω V TM 通态峰值电压 I TM =330A 25 1.50 1.60 V dv/dt 断态电压临界上升率 V DM =67%V DRM 125 800 V/μs di/dt 通态电流临界上升率 I TM =330A 门极触发电流幅值 IGM=1.5A ，门极电流上升时间tr ≤0.5μs 125 100 A/μs I GT 门极触发电流 30 40 100 mA V GT 门极触发电压 V A =12V ，I A =1A 25 0.8 1.0 2.5 V I H 维持电流 20 100 mA V GD 门极不触发电压 V DM =67%V DRM 125 0.2 V R th(j-c) 热阻抗（结至壳） 180°正弦半波，单面散热 0.250 ℃/W R th(c-h) 热阻抗（结至散） 180°正弦半波，单面散热 0.15 ℃/W V iso 绝缘电压 50HZ ，R.M.S ，t=1min I iso :1Ma(max) 2500 V F m 安装扭矩（M5） 安装扭矩（M6） 2.0 3.0 N ·m N ·m T sbg 储存温度 -40 125 ℃ W t 质量 140 g 特点： ■芯片与底板电气绝缘，2500V 交流绝缘 ■采用德国产玻璃钝化芯片焊接，优良的温度特性和功率循环能力 ■体积小，重量轻 典型应用： ■加热控制器 ■交直流电机控制 ■各种整流电源 ■交流开关 I T(A V) 110A V DRM /V RRM 600~1800V I TSM 2.4KA I 2T 29 103A 2S

各种规格型号可控硅晶闸管

KK200A/600V, KK200A/800V, KK200A/1000V, KK200A/1200V, KK200A/1400V, KK200A/1600V, KK200A/1800V, KK200A/2000V, KK200A/2500V, KK200A/3000V, KK300A/600V, KK300A/800V, KK300A/1000V, KK300A/1200V, KK300A/1400V, KK300A/1600V, KK300A/1800V, KK300A/2000V, KK300A/2500V, KK300A/3000V, KK500A/600V, KK500A/800V, KK500A/1000V, KK500A/1200V, KK500A/1400V, KK500A/1600V, KK500A/1800V, KK500A/2000V, KK500A/2500V, KK500A/3000V,KK800A/600V, KK800A/800V, KK800A/1000V, KK800A/1200V, KK800A/1400V, KK800A/1600V, KK800A/1800V, KK800A/2000V, KK800A/2500V, KK800A/3000V, KK1000A/600V, KK1000A/800V, KK1000A/1000V, KK1000A/1200V, KK1000A/1400V, KK1000A/1600V, KK1000A/1800V, KK1000A/2000V, KK1000A/2500V, KK1000A/3000V, KK1000A/3300V, KK1000A/3800V, KK1000A/4000V, KK1200A/600V, KK1200A/800V, KK1200A/1000V, KK1200A/1200V, KK1200A/1400V, KK1200A/1600V, KK1200A/1800V, KK1200A/2000V, KK1200A/2500V, KK1200A/3000V, KK1200A/3300V, KK200A/600V, KK200A/800V, KK200A/1000V, KK200A/1200V, KK200A/1400V, KK200A/1600V, KK200A/1800V, KK200A/2000V, KK200A/2500V, KK200A/3000V, KK300A/600V, KK300A/800V, KK300A/1000V, KK300A/1200V, KK300A/1400V, KK300A/1600V, KK300A/1800V, KK300A/2000V, KK300A/2500V, KK300A/3000V, KK500A/600V, KK500A/800V, KK500A/1000V, KK500A/1200V, KK500A/1400V, KK500A/1600V, KK500A/1800V, KK500A/2000V, KK500A/2500V, KK500A/3000V,KK800A/600V, KK800A/800V, KK800A/1000V, KK800A/1200V, KK800A/1400V, KK800A/1600V, KK800A/1800V, KK800A/2000V, KK800A/2500V, KK800A/3000V, KK1000A/600V, KK1000A/800V, KK1000A/1000V, KK1000A/1200V, KK1000A/1400V, KK1000A/1600V, KK1200A/1600V, KK1200A/1800V, KK1200A/2000V, KK1200A/2500V, KK1200A/3000V, KK1200A/3300V, KK1200A/3800V, KK1200A/4000V, KK1500A/600V, KK1500A/800V, KK1500A/2000V,KK1500A/2500V KK1500A/1000V, KK1500A/1200V, KK1500A/1400V, KK1500A/1600V, KK1500A/1800V, KK1500A/2000V, KK1500A/2500V, KK1500A/3000V, KK1500A/3300V, KK1500A/3800V, KK1500A/4000V, KK1600A/600V, KK1600A/800V, KK1600A/1000V, KK1600A/1200V, KK1600A/1400V, KK1600A/1600V, KK1600A/1800V, KK1600A/2000V, KK1600A/2500V, KK1600A/3000V, KK1600A/3300V, KK1600A/3800V, KK1600A/4000V, KK2000A/600V, KK2000A/800V, KK2000A/1000V, KK2000A/1200V, KK2000A/1400V, KK2000A/1600V, KK2000A/1800V, KK2000A/2000V, KK2000A/2500V, KK2000A/3000V, KK2000A/3300V, KK2000A/3800V, KK2000A/4000V, KK2500A/600V, KK2500A/800V, KK2500A/1000V, KK2500A/1200V, KK2500A/1400V, KK2500A/1600V, KK2500A/1800V, KK2500A/2000V, KK2500A/2500V, KK2500A/3000V, KK2500A/3300V, KK2500A/3800V, KK2500A/4000V, KK3000A/600V, KK3000A/800V, KP3000A/1000V, KK3000A/1200V, KK3000A/1400V, KK3000A/1600V, KK3000A/1800V, KK3000A/2000V, KK3000A/2500V, KK3000A/3000V KK3000A/3500V,KK3500A/3000V,KK3000A/4000V,KK3500A/3000V,KK3500A/3500V,KK3500A/4000V KK3500A/4500V,KK3500A/5000V,KK3500A/5500V,KK3500A/6000V,KK4000A/3000V,KK4000A/3500V KK4000A/4000V,KK4000A/4500V,KK4000A/5000V,KK4000A/5500V,KK4000A/6000V,KK4000A/6500V KK5000A/3000V,KK5000A/3500V,KK5000A/4000V,KK5000A/4500V,KK5000A/5000V,KK5000A/5500V KP5000A/6000V,KP5000A/6500V,KP5500A/3000V,KP5500A/4000V,KP5500A/4500V,KP5500A/5000V KK5000A/6000V,KK5000A/6500V,KK5500A/3000V,KK5500A/4000V,KK5500A/4500V,KK5500A/5000V KP1000A/1800V, KP1000A/2000V, KP1000A/2500V, KP1000A/3000V, KP1000A/3300V, KP1000A/3800V, KP1000A/4000V, KP1200A/600V, KP1200A/800V, KP1200A/1000V, KP1200A/1200V, KP1200A/1400V, KP1200A/1600V, KP1200A/1800V, KP1200A/2000V, KP1200A/2500V, KP1200A/3000V, KP1200A/3300V, KP1200A/3800V, KP1200A/4000V, KP1500A/600V, KP1500A/800V, KP1500A/2000V,KP1500A/2500V KP1500A/1000V, KP1500A/1200V, KP1500A/1400V, KP1500A/1600V, KP1500A/1800V, KP1500A/2000V, KP1500A/2500V, KP1500A/3000V, KP1500A/3300V, KP1500A/3800V, KP1500A/4000V, KP1600A/600V, KP1600A/800V, KP1600A/1000V, KP1600A/1200V, KP1600A/1400V, KP1600A/1600V, KP1600A/1800V,

电力电子技术考前模拟题(有答案)

电力电子技术考前模拟题 一、选择题 1、单相半控桥整流电路的两只晶闸管的触发脉冲依次应相差A度。 A、180°， B、60°，c、360°， D、120° 2、α为C度时，三相半波可控整流电路，电阻性负载输出的电压波形，处于连续和断续的临界状态。 A，0度，B，60度，C，30度，D，120度， 3、晶闸管触发电路中，若改变B 的大小，则输出脉冲产生相位移动，达到移相控制的目的。 A、同步电压， B、控制电压， C、脉冲变压器变比。 4、可实现有源逆变的电路为A。 A、三相半波可控整流电路， B、三相半控桥整流桥电路， C、单相全控桥接续流二极管电路， D、单相半控桥整流电路。 5、在一般可逆电路中，最小逆变角βmin选在下面那一种范围合理A。 A、30o-35o， B、10o-15o， C、0o-10o， D、0o。 6、在下面几种电路中，不能实现有源逆变的电路有哪几种BCD。 A、三相半波可控整流电路。 B、三相半控整流桥电路。 C、单相全控桥接续流二极管电路。 D、单相半控桥整流电路。 11、下面哪种功能不属于变流的功能（C） A、有源逆变 B、交流调压 C、变压器降压 D、直流斩波 12、三相半波可控整流电路的自然换相点是( B ) A、交流相电压的过零点； B、本相相电压与相邻相电压正、负半周的交点处； C、比三相不控整流电路的自然换相点超前30°； D、比三相不控整流电路的自然换相点滞后60°。 13、如某晶闸管的正向阻断重复峰值电压为745V，反向重复峰值电压为825V，则该晶闸管的额定电压应为 （B） A、700V B、750V C、800V D、850V 14、单相半波可控整流电阻性负载电路中，控制角α的最大移相范围是( D ) A、0o-90° B、0o-120° C、0o-150° D、0o-180° 15、在单相全控桥整流电路中，两对晶闸管的触发脉冲，应依次相差A度。 A 、180度；B、60度；C、360度；D、120度； 16、可实现有源逆变的电路为A。 A、单相全控桥可控整流电路 B、三相半控桥可控整流电路 C、单相全控桥接续流二极管电路 D、单相半控桥整流电路 17、由晶闸管构成的可逆调速系统中，逆变角βmin选A 时系统工作才可靠。 A、300~350 B、100~150 C、00~100 D、00 18、α= B度时，三相全控桥式整流电路带电阻负载电路，输出负载电压波形处于连续和断续的临界状态。 A、0度； B、60度； C、30度； D、120度； 19、变流装置的功率因数总是C。 A、大于1； B、等于1； C、小于1； 20、变流器工作在逆变状态时，控制角α必须在D 度。 A、0°-90°； B、30°-120°； C、60°-150°；。 D、90°-150°； 2、三相半波可控整流电阻性负载电路，如果三个晶闸管采用同一相触发脉冲，α的移相范围D。 A、0o--60o； B、0o--90o；。 C、0o--120o； D、0o--150o； 23、在单相桥式全控整流电路中，大电感负载时，控制角α的有效移相范围是A。 A、0°～90° B、0°～180° C、90°～180° 24、三相全控桥式整流电路带电阻负载，当触发角α=0o时，输出的负载电压平均值为D。 A、0.45U2； B、0.9U2； C、1.17U2； D、2.34U2； 26、三相全控桥式整流电路带大电感负载时，控制角α的有效移相范围是A度。 A、0°-90°； B、30°-120°； C、60°-150°； D、90°-150°； 二、判断题 1、在半控桥整流带大电感负载不加续流二极管电路中，电路出故障时会出现失控现象。（√） 2、在用两组反并联晶闸管的可逆系统，使直流电动机实现四象限运行时，其中一组逆变器工作在整流状态，那么另一组就工作在逆变状态。（×） 3、晶闸管串联使用时，必须注意均流问题。（×） 4、逆变角太大会造成逆变失败。（×） 5、并联谐振逆变器必须是略呈电容性电路。（√） 6、给晶闸管加上正向阳极电压它就会导通。（×）

可控硅并联阻容吸收电路的选型与计算(修正)

可控硅并联阻容吸收电路的选型与计算 为什么要在晶闸管两端并联阻容网络 一、在实际晶闸管电路中，常在其两端并联RC串联网络，该网络常称为RC阻容吸收电路。 我们知道，晶闸管有一个重要特性参数－断态电压临界上升率dlv/dlt。它表明晶闸管在额定结温和门极断路条件下，使晶闸管从断态转入通态的最低电压上升率。若电压上升率过大，超过了晶闸管的电压上升率的值，则会在无门极信号的情况下开通。即使此时加于晶闸管的正向电压低于其阳极峰值电压，也可能发生这种情况。因为晶闸管可以看作是由三个PN结组成。 在晶闸管处于阻断状态下，因各层相距很近，其J2结结面相当于一个电容C0。当晶闸管阳极电压变化时，便会有充电电流流过电容C0，并通过J3结，这个电流起了门极触发电流作用。如果晶闸管在关断时，阳极电压上升速度太快，则C0的充电电流越大，就有可能造成门极在没有触发信号的情况下，晶闸管误导通现象，即常说的硬开通，这是不允许的。因此，对加到晶闸管上的阳极电压上升率应有一定的限制。 为了限制电路电压上升率过大，确保晶闸管安全运行，常在晶闸管两端并联RC阻容吸收网络，利用电容两端电压不能突变的特性来限制电压上升率。因为电路总是存在电感的(变压器漏感或负载电感)，所以与电容C串联电阻R可起阻尼作用，它可以防止R、L、C电路在过渡过程中，因振荡在电容器两端出现的过电压损坏晶闸管。同时，避免电容器通过晶闸管放电电流过大，造成过电流而损坏晶闸管。 由于晶闸管过流过压能力很差，如果不采取可靠的保护措施是不能正常工作的。RC阻容吸收网络就是常用的保护方法之一。 二、整流晶闸管(可控硅)阻容吸收元件的选择 电容的选择 C=(2.5-5)×10的负8次方×If If=0.367Id Id-直流电流值 如果整流侧采用500A的晶闸管(可控硅) 可以计算C=(2.5-5)×10的负8次方×500=1.25-2.5mF 选用2.5mF，1kv 的电容器 电阻的选择： R=((2-4) ×535)/If=2.14-8.56 选择10欧 PR=(1.5×(pfv×2πfc)的平方×10的负12次方×R)2 Pfv=2u(1.5-2.0) u=三相电压的有效值 阻容吸收回路在实际应用中，RC的时间常数一般情况下取1~10毫秒。 小功率负载通常取2毫秒左右，R=220欧姆1W，C=0.01微法400~630V。

晶闸管的基本检测方法

晶闸管的基本检测方法 1.判别单向晶闸管的阳极、阴极和控制极 脱开电路板的单向晶闸管，阳极、阴极和控制极3个引脚一般没有特殊的标注，识别各个脚主要是通过检测各个引脚之间的正、负电阻值来进行的。晶闸管各个引脚之间的阻值都较大，当检测出现唯一一个小阻值时，此时黑表笔接的是控制极(G)，红表笔接的是阴极(K)，另外一个引脚就是阳极(A)。 2.判别单向晶闸管的好坏 脱开电路板的单向晶闸管，阳极(A)、阴极(K)和控制极(G)明确标示；正常的单向闸管，阳极(A)、阴极(K)两个引脚之间的正、反向电阻，阳极(A)、控制极(G)两个引脚之间的正、反向电阻的阻值应该都很大，阴极(K)、控制极(G)两个引脚之间的正向电阻应该远小于反向电阻。并且阳极(A)、阴极(K)两个引脚之间的正向电阻越大，单向晶闸管阳极的正向阻断特性越好;反向电阻越大，单向晶闸管阳极的反向阻断特性越好。 3.判别双向晶闸管的好坏 脱开电路板的双向晶闸管，第一电极(T1)、第二电极(T2)、控制极(G)明确。判断双向晶闸管的好坏，主要是看短路前第二电极(T2)和第一电极(T1)之间阻值接近无穷大，第二电极（T2)与控制极(G)引脚短路，短路后晶闸管触发导通，第二电极(T2)·和第一电极（T1）之间的电阻变小，有固定值。可以断定该双向晶闸管具备双向触发能力，性能基本良好。 4.晶闸管的代换原则 晶闸管的品种繁多，不同的电子设备与不同的电子电路，采用不同类型的晶闸管。选用与代换晶闸管时，主要应考虑其额定峰值电压、额定电流、正向压降、门极触发电流及触发电压、开关速度等参数，额定峰值电压和额定电流均应高于工作电路的最大工作电压和最大工作电流1.5～2倍，代换时最好选用同类型、同特性、同外形的晶闸管替换。 普通晶闸管一般被用于交直流电压控制、可控整流、交流调压、逆变电源，开关电源保护等电路。 双向晶闸管一般被用于交流开关、交流调压、交流电动机线性凋速、灯具线性调光及固态继电器、固态接触器等电路。 逆导晶闸管一般被用于电磁灶、电子镇流器、超声波电路、超导磁能贮存系统及开关电源等电路。 光控晶闸管一般被用于光电耀合器、光探测器、光报警器、光计数器、光电逻辑电路及自动生产线的运行监控电路等。 BTC晶体管一般被用于锯齿波发生器、长时间延时器、过电压保护器及大功率晶体管触发电路等。 门极关断晶闸管一般被用于交流电动机变频调速、斩波器、逆变电源及各种电子开关电路等。