2N5460;2N5461;2N5460G;2N5461G;2N5461RLRA;中文规格书,Datasheet资料

? Semiconductor Components Industries, LLC, 2006 March, 2006 ? Rev. 51Publication Order Number:

2N5460/D

2N5460, 2N5461, 2N5462 JFET Amplifier

P?Channel ? Depletion

Features

?Pb?Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit Drain ? Gate Voltage V DG40Vdc Reverse Gate ? Source Voltage V GSR40Vdc Forward Gate Current I

G(f)10mAdc

Total Device Dissipation @ T A = 25°C Derate above 25°C P D350

2.8

mW

mW/°C

Junction Temperature Range T J

?65 to +135°C

Storage Channel Temperature Range T stg?65 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Preferred devices are recommended choices for future use and best overall value.

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

https://www.sodocs.net/doc/bc13945441.html,

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS Gate ?Source Breakdown Voltage (I G = 10 m Adc, V DS = 0)2N5460, 2N5461, 2N5462V (BR)GSS 40??Vdc Gate Reverse Current

(V GS = 20 Vdc, V DS = 0)2N5460, 2N5461, 2N5462(V GS = 30 Vdc, V DS = 0)

(V GS = 20 Vdc, V DS = 0, T A = 100°C)2N5460, 2N5461, 2N5462

(V GS = 30 Vdc, V DS = 0, T A = 100°C)I GSS

???? 5.01.0nAdc m Adc Gate ?Source Cutoff Voltage

2N5460(V DS = 15 Vdc, I D = 1.0 m Adc)2N54612N5462V GS(off)0.751.01.8??? 6.07.59.0Vdc

Gate ?Source Voltage

(V DS = 15 Vdc, I D = 0.1 mAdc)2N5460(V DS = 15 Vdc, I D = 0.2 mAdc)2N5461(V DS = 15 Vdc, I D = 0.4 mAdc)2N5462

V GS

0.50.81.5

???

4.04.56.0

Vdc

ON CHARACTERISTICS

Zero?Gate ?Voltage Drain Current

2N5460(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)2N54612N5462

I DSS

?1.0?2.0

?4.0

???

?5.0?9.0?16

mAdc

SMALL?SIGNAL CHARACTERISTICS Forward Transfer Admittance

2N5460(V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)

2N54612N5462

?y fs ?

100015002000???400050006000m mhos

Output Admittance (V DS = 15 Vdc, V GS = 0, f = 1.0 kHz)?y os ???75m mhos Input Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz)

C iss ? 5.07.0pF Reverse Transfer Capacitance (V DS = 15 Vdc, V GS = 0, f = 1.0 MHz)C rss

?

1.0

2.0

pF

ORDERING INFORMATION

Device

Package Shipping ?

2N5460TO?921000 Units / Box 2N5460G TO?92(Pb?Free)2N5461TO?922N5461G TO?92(Pb?Free)2N5461RLRA TO?922000 / Tape & Reel 2N5461RLRAG TO?92(Pb?Free)2N5462TO?921000 Units / Box 2N5462G

TO?92(Pb?Free)

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Y f s F O R W A R D T R A N S F E R A D M I T T A N C E (m h o s )

m Y f s F O R W A R D T R A N S F E R A D M I T T A N C E (m h o s )m DRAIN CURRENT versus GATE

SOURCE VOLTAGE

FORWARD TRANSFER ADMITTANCE

versus DRAIN CURRENT

I D , D R A I N C U R R E N T (m A )

Y f s F O R W A R D T R A N S F E R A D M I T T A N C E (m h o s )

m 4.0

V GS , GATE?SOURCE VOLTAGE (VOLTS)

Figure 1. V GS(off) = 2.0 V

I D , DRAIN CURRENT (mA)

I D , D R A I N C U R R E N T

(m A )

1010000V GS , GATE?SOURCE VOLTAGE (VOLTS)

Figure 2. V GS(off) = 4.0 V

I D , DRAIN CURRENT (mA)

I D , D R A I N

C U R R

E N T (m A )

1610000V GS , GATE?SOURCE VOLTAGE (VOLTS)

Figure 3. V GS(off) = 5.0 V I D , DRAIN CURRENT (mA)

Figure 4. V GS(off) = 2.0 V

Figure 5. V GS(off) = 4.0 V

Figure 6. V GS(off) = 5.0 V

050070010002000

30005000700050070010002000

300050007000

1000

10r o s s , O U T P U T R E S I S T A N C E (k o h m s )

R S , SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus

Source Resistance

Figure 10. Equivalent Low Frequency Circuit

20305070100200300500700NOTE:

1.Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms,Duty Cycle = 10%).

*C osp is C oss in parallel with Series Combination of C iss and C rss .

v COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz y is = j W C iss

y os = j W C osp * + 1/r oss y fs = y fs |y rs = ?j W C rss

PACKAGE DIMENSIONS

STYLE 7:

PIN 1.SOURCE

2.DRAIN

3.GATE

TO?92CASE 29?11ISSUE AL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

DIM

MIN MAX MIN MAX MILLIMETERS

INCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500???12.70???L 0.250??? 6.35???N 0.0800.105 2.04 2.66P ???0.100??? 2.54R 0.115??? 2.93???V

0.135???

3.43???

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

分销商库存信息:

ONSEMI

2N54602N54612N5460G

2N5461G2N5461RLRA2N5461RLRAG 2N5462G2N5462