OPB815WZ;OPB815L;OPB815W;中文规格书,Datasheet资料

Wide slot width: 0.375” (9.5 mm) Deep slot depth: 0.430” (10.9 mm)

Selectable wire lengths from 24” (610 mm) Seven popular connector options

Description:

The OPB815 consists of an infrared Light Emitting Diode (LED) and an NPN silicon phototransistor mounted in a low-cost plastic housing. The device is designed to switch electrical states when an opaque object is passed through the slot. The slot is wider and deeper than many slotted switches and will accommodate a variety of different materials.

This device can be ordered with PCBoard solderable leads (OPB815L) or with 26 AWG stranded, UL rated wire length of 24” [610 mm] (OPB815WZ).

Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information.

Product Photo Here

L Package

WZ Package

Part

LED Peak Slot Aperture Emitter /Sensor

Lead Length / OPB815L 890 nm Transistor 0.375" / 0.430” None 0.10" / 0.53" OPB815WZ

890 nm

Transistor

0.375"/ 0.430”

None

24" / 26 AWG

Ordering Information

Applications:

? Non-contact object sensing ? Assembly line automation ? Machine automation ? Equipment security ? Machine safety

OPB815WZ

OPB815L

Color Description Red Anode Black Cathode White Collector Green Emitter

Pin # Description

1 Anode

2 Cathode

3 Collector

4 Emitter

DIMENSIONS ARE IN:

INCHES

[ MILLIMETERS]

Electrical Characteristics (T A = 25°C unless otherwise noted)

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Infrared LED (see OP240 for additional information)

V F Forward Voltage - - 1.7 V I F = 20 mA I R Reverse

Current - - 100 μA V R = 2 V

Output Phototransistor (see OP550 for additional information) V (BR)CEO Collector-Emitter Breakdown Voltage 30 - - V I C = 1 mA V (BR)ECO Emitter-Collector Breakdown Voltage 5 - - v I E = 100 μA I CEO Collector-Emitter Dark Current

-

-

100

nA

V CE = 10 V, I F = 0, E E = 0

Coupled

V CE(SAT) Collector-Emitter Saturation Voltage - - 0.4 V I C = 500 μA, I F = 20 mA I C(ON)

On-State Collector Voltage

3.5

-

16

mA

V CE = 10 V, I F

= 20 mA

Absolute Maximum Ratings (T A =25°C unless otherwise noted)

Storage & Operating Temperature Range

-40° C to +80° C

Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 260° C

Input Infrared LED

Continuous Forward Current 50 mA Reverse Voltage 2 V Power Dissipation (2) 100 mW

Output Phototransistor

Collector-Emitter Voltage 30 V

Emitter-Collector Voltage 5 V Power Dissipation (2)

100 mW Notes:

(1) All wires are 26 AWG stranded, UL rated. (2) Derate linearly 1.67mW/°C above 25° C.

(3) Methanol or isopropanol are recommended as cleaning agents.

The plastic housing is soluble in chlorinated hydrocarbons and keytones.

(4) All parameters tested using pulse techniques.

Test Diagram

OPB815 - Flag in Middle of Slot

0.000.050.100.150.200.25

Displacement Distance (inches)

OPB815 - Flag Next to Sensor

0.000.050.100.150.200.25

Displacement Distance (inches)

OPB815 - Flag Next to Emitter

0.000.050.100.150.200.25

Displacement Distance (inches)

Output Current vs Forward Current vs

05101520253035404550

Forward Current - mA

Refer to Test Diagram on page 2 for definition of “Top to Bottom”, “Left to Right” and “Right to Left”

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OPB815WZ OPB815L OPB815W