AO3422中文资料

Symbol

Typ Max 75100115150R θJL

4860Maximum Junction-to-Lead C

Steady-State

°C/W

Parameter

Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Thermal Characteristics AO3422

AO3422

Symbol Min Typ

Max

Units BV DSS 55

V 1T J =55°C

5I GSS ±100nA V GS(th)0.6 1.32V I D(ON)10

A 125160T J =125°C

175210157200m Ωg FS 11S V SD 0.78

1V I S

1A C iss 214

300

pF C oss 31pF C rss 12.6pF R g 1.33ΩQ g 2.6 3.3

nC Q gs 0.6nC Q gd 0.8nC t D(on) 2.3ns t r 2.4ns t D(off)16.5ns t f 2ns t rr 2030

ns Q rr 17

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =27.5V, I D =2.1A

Gate Source Charge Gate Drain Charge Turn-On DelayTime V GS =10V, V DS =27.5V, R L =12Ω, R GEN =3Ω

Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance V GS =0V, V DS =0V, f=1MHz

Forward Transconductance V DS =5V, I D =2.1A Diode Forward Voltage I S =1A Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =25V, f=1MHz Output Capacitance R DS(ON)Static Drain-Source On-Resistance

V GS =4.5V, I D =2.1A

m ΩV GS =2.5V, I D =1.5A

Gate Threshold Voltage V DS =V GS I D =250μA On state drain current

V GS =4.5V, V DS =5V V DS =44V, V GS =0V

μA Gate-Source leakage current V DS =0V, V GS =±12V I F =2.1A, dI/dt=100A/μs I F =2.1A, dI/dt=100A/μs

Electrical Characteristics (T J =25°C unless otherwise noted)Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =10mA, V GS =0V I DSS Zero Gate Voltage Drain Current A: The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0: Oct 2005

AO3422

AO3422