SUV90N06-05中文资料
FEATURES
D TrenchFET r Power MOSFETS D 200_C Junction Temperature D PWM Optimized
APPLICATIONS
D Isolated DC/DC Converters
-Primary-Side Switch D Automotive
-Fan Motors -12-V Boardnet -Motor Drives
SUV90N06-05
Vishay Siliconix
New Product
Document Number: 72112N-Channel 60-V (D-S) 200_C MOSFET
D
G
N-Channel MOSFET
TO-262
S
D G Top View SUV90N06-05
3
12
Notes
a.Package limited.
b.Duty cycle v 1%.
c.See SOA curve for voltage derating.
d.When mounted on 1” square PCB (FR-4 material).
Vishay Siliconix New Product
Notes
a.Pulse test; pulse width v300 m s, duty cycle v2%.
b.Guaranteed by design, not subject to production testing.
c.Independent of operating temperature.
SUV90N06-05
Vishay Siliconix
New Product
Document Number: 72112
02000
4000
6000
8000
1000012000
6
12
18
24
30
04
8
12
16
20
60
120
180
240
300
050
100
150200250
20
40
60
80
100
0.000
0.002
0.004
0.006
0.008
20
40
60
80
100
120
40
80
120
160200
012345
050
100150200250
2
4
6
8
10
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
- D r a i n C u r r e n t (A )
I D - G a t e -t o -S o u r c e V o l
t a g e (V )
Q g - Total Gate Charge (nC)
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
C - C a p a c i t a n c e (p F )
V G S - T r a n s c o n d u c t a n c e (S )
g f s - O n -R e s i s t a n c e (r D S (o n )W )
- D r a i n C u r r e n t (A )
I D I D - Drain Current (A)
SUV90N06-05
Vishay Siliconix
New Product
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
-50-25
0255075100125150175200
T J - Junction Temperature (_C)
t in (Sec)
0.0001
0.001
0.1
1
0.01
SUV90N06-05
Vishay Siliconix
New Product
Document Number: 72112
Safe Operating Area
Maximum Drain Current vs.
Case Temperature
- D r a i n C u r r e n t (A )
I D Square Wave Pulse Duration (sec)
21
0.1
0.01
10-4
10-310-210-11N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e
10