STP12NM50N中文资料
November 2006 Rev 71/18
STB12NM50N - STD12NM50N STF12NM50N - STP12NM50N
N-channel 500V - 0.29? - 11A - TO-220 /FP- D 2PAK - DP AK
Second generation MDmesh? Power MOSFET
General features
■100% avalanche tested
■Low input capacitance and gate charge ■
Low gate input resistancel
Description
This series of devices is realized with the second generation of MDmesh? technology. This
revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Applications
■
Switching application
Type V DSS (@Tjmax)R DS(on)I D STB12NM50N 550V <0.38?11A STD12NM50N 550V <0.38?11A STF12NM50N 550V <0.38?11A (1)STP12NM50N
550V
<0.38?
11A
https://www.sodocs.net/doc/c13334089.html,
Order codes
Part number Marking Package Packaging STB12NM50N B12NM50N D2P AK Tape & reel STD12NM50N D12NM50N DP AK Tape & reel STF12NM50N F12NM50N TO-220FP T ube STP12NM50N
P12NM50N
TO-220
T ube
Contents STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
Contents
1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Electrical ratings
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1 Electrical ratings
Table 1.
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220-D/D2PAK
TO-220FP
V DS Drain-source voltage (V GS = 0)500V V GS Gate-source voltage
± 25
V I D Drain current (continuous) at T C = 25°C 1111(1)1.Limited only by maximum temperature allowed A I D Drain current (continuous) at T C =100°C 6.7 6.7(1)A I DM (2)2.Pulse width limited by safe operating area Drain current (pulsed)4444 (1)A P TOT Total dissipation at T C = 25°C 10025W Derating factor
0.8
0.2W/°C dv/dt (3)3.I SD ≤11A, di/dt ≤400A/μs, V DD =80%V (BR)DSS
Peak diode recovery voltage slope
15
V/ns V ISO Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1s;T C =25°C)
--2500
V T J T stg
Operating junction temperature Storage temperature
-55 to 150°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
D2PAK
DPAK
TO-220FP
R thj-case Thermal resistance junction-case max 1.25
5
°C/W R thj-a Thermal resistance junction-ambient max 62.5
10062.5
°C/W T l
Maximum lead temperature for soldering purpose
300
°C
Table 3.
Avalanche characteristics
Symbol Parameter
Value Unit I AS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)5A E AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Ias, Vdd=50V)
350
mJ
Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
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2 Electrical characteristics
(T CASE =25°C unless otherwise specified)Table 4.
On/off states
Symbol Parameter
Test conditions Min Typ.
Max
Unit V (BR)DSS Drain-source breakdown
voltage
I D = 1mA, V GS = 0
500
V dv/dt (1)1.Characteristic value at turn off inductive load
Peak diode recovery voltage slope Vdd=400V , Id=11A, Vgs=10V 44
V/ns I DSS Zero gate voltage drain current (V GS = 0)
V DS = Max rating,V DS = Max rating @125°C 110μA μA I GSS Gate body leakage current (V DS = 0)
V GS = ±20V
100
nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250μA 2
34V R DS(on)
Static drain-source on resistance
V GS = 10V , I D = 5.5A
0.29
0.38
?
Table 5.
Dynamic
Symbol Parameter
Test conditions Min
Typ.Max
Unit g fs (1)1.Pulsed: pulse duration=300μs, duty cycle 1.5%
Forward transconductance V DS =15V , I D = 5.5A 8S C iss C oss C rss
Input capacitance Output capacitance Reverse transfer capacitance
V DS =25V , f=1 MHz, V GS =0
88023030pF pF pF C oss eq (2).2.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS
inceases from 0 to 80% V DSS
Equivalent output
capacitance
V GS =0, V DS =0V to 400V 130pF Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge
V DD =400V , I D = 11A V GS =10V (see Figure 9)
30615
nC nC nC
R g
Gate input resistance f=1MHz Gate DC Bias=0 test signal level=20mV open drain
4.5?
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Electrical characteristics
5/18
Table 6.
Switching times
Symbol Parameter
Test conditions Min
Typ.Max
Unit t d(on)t r t d(off)t f
Turn-on delay time Rise time
Turn-off delay time Fall time
V DD =250 V , I D = 5.5A, R G =4.7?, V GS =10V (see Figure 15)
15156014
ns ns ns ns
Table 7.
Source drain diode
Symbol Parameter
Test conditions
Min
Typ.
Max Unit I SD Source-drain current 11A I SDM (1)1.Pulse width limited by safe operating area Source-drain current (pulsed)44A V SD (2)2.Pulsed: pulse duration=300μs, duty cycle 1.5%
Forward on voltage I SD =11A, V GS =0 1.3
V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =11A,
di/dt = 100A/μs,V DD =100V , Tj=25°C 3403.520ns μC A t rr Q rr I RRM
Reverse recovery time Reverse recovery charge Reverse recovery current
I SD =11A,
di/dt = 100A/μs,
V DD =100V , Tj=150°C
420420
ns μC A
Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
6/18
2.1 Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220/
Figure 2.
Thermal impedance for TO-220/ Figure 3.
Safe operating area for TO-220FP Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Output characterisics Figure 6.
Transfer characteristics
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Electrical characteristics
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Figure 7.
Transconductance Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10.Capacitance variations
Figure 11.Normalized gate threshold voltage
Figure 12.Normalized on resistance vs
Electrical characteristics STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
8/18
Figure 13.Source-drain diode forward
Figure 14.Normalized B VDSS vs temperature
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Test circuit
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3 Test circuit
Figure 15.Switching times test circuit for
Figure 16.Gate charge test circuit
Figure 17.Test circuit for inductive load
Figure 18.Unclamped Inductive load test
Figure 19.Unclamped inductive waveform
Figure 20.Switching time waveform
Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N 4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK?
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: https://www.sodocs.net/doc/c13334089.html,
10/18
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Package mechanical data
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Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
12/18
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Package mechanical data
13/18
Package mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
14/18
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Packaging mechanical data
15/18
5
Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM.mm inch MIN.
MAX.MIN.
MAX.A 330
12.992
B 1.50.059
C 12.813.20.5040.520
D 20.20.795G 16.418.40.6450.724N 50
1.968
T
22.40.881
BASE QTY BULK QTY 2500
2500REEL MECHANICAL DATA
DIM.mm inch MIN.MAX.MIN.
MAX.
A0 6.87
0.2670.275B010.410.60.4090.417
B112.10.476
D 1.5 1.60.0590.063D1 1.50.059
E 1.65 1.850.0650.073
F 7.47.60.2910.299K0 2.55 2.750.1000.108P0 3.9 4.10.1530.161P17.98.10.3110.319P2 1.9 2.1
0.0750.082R 40 1.574W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Packaging mechanical data STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
16/18
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN.MAX.MIN.MAX.
A33012.992
B 1.50.059
C12.813.20.5040.520
D20.20795
G24.426.40.960 1.039
N100 3.937
T30.4 1.197
BASE QTY BULK QTY
10001000
REEL MECHANICAL DATA DIM.
mm inch
MIN.MAX.MIN.MAX.
A010.510.70.4130.421
B015.715.90.6180.626
D 1.5 1.60.0590.063
D1 1.59 1.610.0620.063
E 1.65 1.850.0650.073
F11.411.60.4490.456
K0 4.8 5.00.1890.197
P0 3.9 4.10.1530.161
P111.912.10.4680.476
P2 1.9 2.10.0750.082
R50 1.574
T0.250.350.00980.0137
W23.724.30.9330.956
TAPE MECHANICAL DATA
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N Revision history
17/18
6 Revision history
Table 8.
Revision history
Date Revision
Changes
24-May-20051First Release
10-Jun-20052Inserted new row in T able 6.: Switching times 28-Sep-20053Complete version
14-Oct-20054Modified Figure 5, Figure 806-Mar-20065New Stylesheet
29-Mar-20066Modified value on Table 4.14-Nov-2006
7
New template
STB12NM50N - STD12NM50N - STF12NM50N - STP12NM50N
18/18Please Read Carefully:
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