SIA432DJ-T1-GE3;中文规格书,Datasheet资料

Vishay Siliconix

SiA432DJ

Document Number: https://www.sodocs.net/doc/dd10211809.html,

N-Channel 30-V (D-S) MOSFET

FEATURES

?Halogen-free

?TrenchFET ? Power MOSFET

?New Thermally Enhanced PowerPAK ?

SC-70 Package

- Small Footprint Area

APPLICATIONS

?Load Switch

Notes:

a.Package limited

b.Surface Mounted on 1" x 1" FR4 board.

c.t = 5 s.

d.See Solder Profile (https://www.sodocs.net/doc/dd10211809.html,/ppg?73257). The PowerPAK SC-70 is a leadless packag

e. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f.Maximum under Steady State conditions is 80 °C/W.PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)b, c Q g (Typ.)30

0.020 at V GS = 10 V 10.1 5.6

0.024 at V GS = 4.5 V

9.2

ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V DS

30V

Gate-Source Voltage

V GS ± 20Continuous Drain Current (T J = 150 °C)T C = 25 °C I D

12a A T C = 70 °C 12a

T A = 25 °C 10.1b, c

T A = 70 °C 8.1b, c

Pulsed Drain Current I DM 30

Continuous Source-Drain Diode Current T C = 25 °C I S 12a

T A = 25 °C 2.9b, c

Maximum Power Dissipation T C = 25 °C P D 19.2W

T C = 70 °C 12.3

T A = 25 °C 3.5b, c T A = 70 °C 2.2b, c

Operating Junction and Storage Temperature Range T J , T stg - 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient b, f

t ≤ 5 s R thJA 2836°C/W

Maximum Junction-to-Case (Drain)Steady State

R thJC 5.3 6.5

https://www.sodocs.net/doc/dd10211809.html, Document Number: 68697

Vishay Siliconix

SiA432DJ

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.Typ.Max.Unit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 μA

30

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA

35mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5.6

Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 μA 1.03V Gate-Source Leakage

I GSS V DS = 0 V, V GS = ± 20 V ± 100nA

Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V 1μA V DS = 30 V , V GS = 0 V , T J = 55 °C

10

On-State Drain Current a

I D(on) V DS ≥ 5 V , V GS = 10 V 20

A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 6 A 0.01580.020ΩV GS = 4.5 V , I D = 5 A 0.0190.024

Forward T ransconductance a g fs

V DS = 10 V, I D = 6 A

22

S Dynamic b

Input Capacitance C iss V DS = 15 V , V GS = 0 V , f = 1 MHz

800pF

Output Capacitance

C oss 115Reverse Transfer Capacitance C rss 54Total Gate Charge Q g V DS = 15 V , V GS = 10 V , I

D = 10 A 1320nC V DS = 15 V, V GS = 4.5 V, I D = 10 A 5.69

Gate-Source Charge Q gs 2Gate-Drain Charge Q gd 1.4Gate Resistance R g f = 1 MHz

3.0Ω

Turn-On Delay Time t d(on) V DD = 15 V , R L = 1.9 Ω I D ? 8 A, V GEN = 4.5 V , R g = 1 Ω

1525ns Rise Time

t r 1117Turn-Off Delay Time t d(off) 1525Fall Time

t f 1015Turn-On Delay Time t d(on) V DD = 15 V , R L = 1.9 Ω

I D ? 8 A, V GEN = 10 V, R g = 1 Ω815Rise Time

t r 815Turn-Off Delay Time t d(off) 1525Fall Time

t f

8

15

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

12A Pulse Diode Forward Current I SM 30Body Diode Voltage

V SD I S = 5 A, V GS = 0 V

0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 8 A, dI/dt = 100 A/μs, T J = 25 °C

1630ns Body Diode Reverse Recovery Charge Q rr 815

nC Reverse Recovery Fall Time t a 9.8ns

Reverse Recovery Rise Time

t b

6.2

Document Number: https://www.sodocs.net/doc/dd10211809.html,

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

Threshold Voltage

Single Pulse Power (Junction-to-Ambient)

https://www.sodocs.net/doc/dd10211809.html, Document Number: 68697

Document Number: https://www.sodocs.net/doc/dd10211809.html,

Vishay Siliconix

SiA432DJ

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

https://www.sodocs.net/doc/dd10211809.html, Document Number: 68697

Vishay Siliconix

SiA432DJ

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.sodocs.net/doc/dd10211809.html,/ppg?68697.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case

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All product specifications and data are subject to change without notice.

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Document Number: https://www.sodocs.net/doc/dd10211809.html,

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SIA432DJ-T1-GE3