G : Lead Free Device
HY3610
P
P : TO220-3L Date Code
HOOYI HOOYI
HOOYI HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
?100V/160A
R DS(ON)=m ? (typ.) @ V GS =10V
N-Channel MOSFET
G
Note:
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020C for MSL classification at lead-free peak reflow temperature. defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Package Code
Assembly Material G
D
S Applications
??Reliable and Rugged
?
Lead Free and Green Devices Available
(RoHS Compliant)
?
Power Management for Inverter Systems.
100% avalanche tested
?Switching application 4.5YYXXXJWW G
YYXXX WW
Absolute Maximum Ratings
Electrical Characteristics (T A = 25°C Unless Otherwise Noted)
Note?G ** Drain current is limited by junction temperature *** VD=80V
* Repetitive rating ; pulse width limiited by junction temperature
Electrical Characteristics (Cont.) (T
= 25°C Unless Otherwise Noted)
A Array Note * : Pulse test ; pulse width≤300s, duty cycle≤2%.
.
Typical Operating Characteristics
Power Dissipation
P t o t - P o w e r (W )
T j - Junction Temperature (°C)
I D - D r a i n C u r r e n t (A )
Drain Current
T j - Junction Temperature (°C)
Safe Operation Area
V DS - Drain - Source Voltage (V)
I D - D r a i n C u r r e n t (A )
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
1E-3
0.01
0.1
1
2
80160240320
400
480
1
10
100
2040
6080100120140
160
200
2
12
10
8
6
4
HY3610P
V DS - Drain-Source Voltage (V)
I D - D r a i n C u r r e n t (A )
I D - Drain Current (A)
V GS - Gate - Source Voltage (V)
R D S (O N ) - O n - R e s i s t a n c e (m ?)
T j - Junction Temperature (°C)
Gate Threshold Voltage
N o r m a l i z e d T h r e s h o l d V l o t a g e
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance 45678910
4080160200240
280
320
Drain-Source On Resistance
N o r m a l i z e d O n R e s i s t a n c e
T j - Junction Temperature (°C)
V SD - Source-Drain Voltage (V)
Source-Drain Diode Forward
I S - S o u r c e C u r r e n t (A )
V DS - Drain - Source Voltage (V)C - C a p a c i t a n c e (p F )
Gate Charge
Q
G - Gate Charge (nC)
V G S - G a t e -s o u r c e V o l t a g e (V )
Typical Operating Characteristics (Cont.)
0.0
0.20.40.60.8 1.0 1.2 1.4
0.11
10
100
160
1
23456789
10
0.2
0.40.60.81.01.21.41.61.82.0
2.22.4
5
10
15
20
25
30
35
4002000
40006000800020000
HY3610P
22000
Avalanche Test Circuit and Waveforms
Avalanche Test Circuit and Waveforms
HY3610P
HY3610P
Package Information
TO-220
Classification Profile
Devices Per Unit
HY3610P
Classification Reflow Profiles
Reliability Test Program
HY3610P