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HY3610P

HY3610P
HY3610P

G : Lead Free Device

HY3610

P

P : TO220-3L Date Code

HOOYI HOOYI

HOOYI HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and

advise customers to obtain the latest version of relevant information to verify before placing orders.

Pin Description

Ordering and Marking Information

Features

?100V/160A

R DS(ON)=m ? (typ.) @ V GS =10V

N-Channel MOSFET

G

Note:

lead-free products contain molding compounds/die attach materials and 100% matte tin plate

termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020C for MSL classification at lead-free peak reflow temperature. defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

Package Code

Assembly Material G

D

S Applications

??Reliable and Rugged

?

Lead Free and Green Devices Available

(RoHS Compliant)

?

Power Management for Inverter Systems.

100% avalanche tested

?Switching application 4.5YYXXXJWW G

YYXXX WW

Absolute Maximum Ratings

Electrical Characteristics (T A = 25°C Unless Otherwise Noted)

Note?G ** Drain current is limited by junction temperature *** VD=80V

* Repetitive rating ; pulse width limiited by junction temperature

Electrical Characteristics (Cont.) (T

= 25°C Unless Otherwise Noted)

A Array Note * : Pulse test ; pulse width≤300s, duty cycle≤2%.

.

Typical Operating Characteristics

Power Dissipation

P t o t - P o w e r (W )

T j - Junction Temperature (°C)

I D - D r a i n C u r r e n t (A )

Drain Current

T j - Junction Temperature (°C)

Safe Operation Area

V DS - Drain - Source Voltage (V)

I D - D r a i n C u r r e n t (A )

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

N o r m a l i z e d E f f e c t i v e T r a n s i e n t

1E-3

0.01

0.1

1

2

80160240320

400

480

1

10

100

2040

6080100120140

160

200

2

12

10

8

6

4

HY3610P

V DS - Drain-Source Voltage (V)

I D - D r a i n C u r r e n t (A )

I D - Drain Current (A)

V GS - Gate - Source Voltage (V)

R D S (O N ) - O n - R e s i s t a n c e (m ?)

T j - Junction Temperature (°C)

Gate Threshold Voltage

N o r m a l i z e d T h r e s h o l d V l o t a g e

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance 45678910

4080160200240

280

320

Drain-Source On Resistance

N o r m a l i z e d O n R e s i s t a n c e

T j - Junction Temperature (°C)

V SD - Source-Drain Voltage (V)

Source-Drain Diode Forward

I S - S o u r c e C u r r e n t (A )

V DS - Drain - Source Voltage (V)C - C a p a c i t a n c e (p F )

Gate Charge

Q

G - Gate Charge (nC)

V G S - G a t e -s o u r c e V o l t a g e (V )

Typical Operating Characteristics (Cont.)

0.0

0.20.40.60.8 1.0 1.2 1.4

0.11

10

100

160

1

23456789

10

0.2

0.40.60.81.01.21.41.61.82.0

2.22.4

5

10

15

20

25

30

35

4002000

40006000800020000

HY3610P

22000

Avalanche Test Circuit and Waveforms

Avalanche Test Circuit and Waveforms

HY3610P

HY3610P

Package Information

TO-220

Classification Profile

Devices Per Unit

HY3610P

Classification Reflow Profiles

Reliability Test Program

HY3610P

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