1N60-TO92
Huajing Discrete Devices
Silicon N-Channel Power MOSFET
1N60
General Description ：
V
DSS 600 V I D 0.8 A P D (T C =25℃) 3 W
R DS(ON)
12
?
1N60 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard.
Features ：
Fast Switching
Low ON Resistance (Rdso n≤15?)
Low Gate Charge (Typical Data:5.0nC)
Low Reverse transfer capacitances (Typical:2.7pF)
100% Single Pulse avalanche energy Test Applications ：
Power switch circuit of adaptor and charger.
Absolute （Tc= 25℃ unless otherwise specified ）：
Symbol Parameter
Rating Units V DSS Drain-to-Source Voltage 600 V Continuous Drain Current
0.8 A I D Continuous Drain Current T C = 100 °C 0.44 A I DM
a1
Pulsed Drain Current 3.2 A V GS Gate-to-Source Voltage ±30 V
E AS a2Single Pulse Avalanche Energy 60 mJ E AR
a1
Avalanche Energy ,Repetitive 6 mJ I AR
a1Avalanche Current 3.4 A dv/dt a3
Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation
3 W P D
Derating Factor above 25°C
0.024 W/℃ T J ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150
℃ T L
MaximumTemperature for Soldering
300
℃
Electrical Characteristics （Tc= 25℃ unless otherwise specified ）：
OFF Characteristics Rating
Symbol Parameter Test Conditions
Min. Typ. Max.
Units
V DSS
Drain to Source Breakdown Voltage V GS =0V, I D =250μA 600 -- -- V
ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.71 -- V/℃
V DS = 600V, V GS = 0V,
T a = 25℃
-- -- 25 I DSS Drain to Source Leakage Current V DS =480V, V GS = 0V, T a = 125℃ -- -- 250μA I GSS(F)Gate to Source Forward Leakage V GS =+30V -- -- 100nA I GSS(R)
Gate to Source Reverse Leakage
V GS =-30V
-- -- -100
nA
ON Characteristics Rating
Symbol Parameter Test Conditions
Min. Typ. Max.
Units
R DS(ON)Drain-to-Source On-Resistance V GS =10V,I D =0.4A -- 12 15 ? V GS(TH)
Gate Threshold Voltage
V DS = V GS , I D = 250μA
2.0
3.0
4.0
V
Pulse width tp ≤380μs,δ≤2%
Dynamic Characteristics Rating Symbol Parameter Test Conditions
Min. Typ. Max.
Units
g fs Forward Transconductance V DS =15V, I D =0.4A
-- 0.70 -- S C iss Input Capacitance -- 92 -- C oss Output Capacitance
-- 16 -- C rss
Reverse Transfer Capacitance
V GS = 0V V DS = 25V
f = 1.0MHz -- 2.7 --
pF
Resistive Switching Characteristics Rating
Symbol Parameter Test Conditions
Min. Typ. Max.
Units
t d(ON)Turn-on Delay Time -- 21 -- tr Rise Time
-- 26 -- t d(OFF)Turn-Off Delay Time -- 11 -- t f Fall Time I D =0.8A V DD = 300V V GS = 10V R G = 25?
-- 27 -- ns
Q g Total Gate Charge -- 5.0 Q gs Gate to Source Charge -- 1 Q gd Gate to Drain (“Miller”)Charge
I D =0.8A V DD =480V
V GS = 10V
-- 2.7
nC
Source-Drain Diode Characteristics Rating
Symbol Parameter Test Conditions
Min. Typ. Max.
Units
I S Continuous Source Current (Body Diode) -- -- 0.8 A I SM Maximum Pulsed Current (Body Diode)
-- -- 3.2 A V SD Diode Forward Voltage I S =0.8A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time -- 140 ns Qrr Reverse Recovery Charge -- 224 nC I RRM
Reverse Recovery Current
I S =0.8A,T j = 25°C dI F /dt=100A/us,
V GS =0V
-- 3.2
A
Pulse width tp ≤380μs,δ≤2%
Symbol Parameter Typ. Units
R θJC Junction-to-Case 41.7 ℃/W R θJA
Junction-to-Ambient
100
℃/W
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, I D =0.8A, Start T J =25℃ a3
：I SD =0.8A,di/dt ≤100A/us,V DD ≤BV DS, Start T J =25℃
vs Drain Current
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.P a g e6o f10 2008
TestCircuitandWaveform
Package Information：
TO-92 Package
The name and content of poisonous and harmful material in products
Hazardous Substance
Part’s Name
Pb Hg Cd Cr(VI) PBB PBDE Limit ≤0.1% ≤0.1%≤0.01%≤0.1%≤0.1%≤0.1% Lead Frame ○○○○○○Molding Compound○○○○○○Chip ○○○○○○Wire Bonding ○○○○○○Solder ○○○○○○
Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Warnings
1. Exceeding the maximun ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.