FDD8444_06中文资料
tm
November 2006
FDD8444 N-Channel PowerTrench ? MOSFET
FDD8444
N-Channel PowerTrench ?
MOSFET 40V, 50A, 5.2m ?
Features
Typ r DS(on) = 4m ? at V GS = 10V, I D = 50A Typ Q g(10) = 89nC at V GS = 10V Low Miller Charge Low Q rr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission
Distributed Power Architecture and VRMs Primary Switch for 12V Systems
L E
A
D F
R E E M T A E L N T I O M P
E N I
FDD8444 N-Channel PowerTrench ? MOSFET
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter
Ratings
Units V DSS Drain to Source Voltage 40V V GS Gate to Source Voltage
±20V I D Drain Current Continuous (V GS = 10V) (Note 1)145A Continuous (V GS = 10V, with R θJA = 52o
C/W) 20Pulsed
Figure 4E AS Single Pulse Avalanche Energy (Note 2)535mJ P D
Power Dissipation 153W Derate above 25
o C
1.02W/o C
T J , T STG Operating and Storage Temperature
-55 to +175
o C
R θJC Thermal Resistance, Junction to Case
0.98o C/W R θJA
Thermal Resistance, Junction to Ambient TO-252, 1in 2
copper pad area
52
o
C/W
Package Marking and Ordering Information
Device Marking
Device Package Reel Size Tape Width Quantity FDD8444
FDD8444
TO-252AA
13”
12mm
2500 units
Electrical Characteristics T J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B VDSS Drain to Source Breakdown Voltage I D = 250μA, V GS = 0V 40- -V I DSS Zero Gate Voltage Drain Current V DS = 32V --1μA V GS = 0V T J = 150o C
-- 250I GSS
Gate to Source Leakage Current
V GS = ±20V
-
-
±100
nA
V GS(th)Gate to Source Threshold Voltage V GS = V DS , I D = 250μA 2 2.54V
r DS(on)
Drain to Source On Resistance
I D = 50A, V GS = 10V -4 5.2m ?I D = 50A, V GS = 10V,T J = 175o C
-7.2
9.4
C iss Input Capacitance V DS = 25V, V GS = 0V,f = 1MHz -6195-pF C oss Output Capacitance
-585-pF C rss Reverse Transfer Capacitance -332-pF R G Gate Resistance f = 1MHz - 1.9 -?Q g(TOT)Total Gate Charge at 10V V GS = 0 to 10V
V DD = 20V I D = 50A
I g = 1.0mA
-89116nC Q g(5)Total Gate Charge at 5V V GS = 0 to 5V
4356nC Q g(TH)Threshold Gate Charge V GS = 0 to 2V
-1114.3nC Q gs Gate to Source Gate Charge -23-nC Q gs2Gate Charge Threshold to Plateau -11 -nC Q gd
Gate to Drain “Miller“ Charge
-20
-nC
FDD8444 N-Channel PowerTrench ? MOSFET
Electrical Characteristics T J = 25o C unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1:Package current limitation is 50A.
2:Starting T J = 25o C, L = 0.67mH, I AS = 40A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
t on Turn-On Time V DD = 20V, I D = 50A V GS = 10V, R GS = 2?
--135ns t d(on)Turn-On Delay Time -12-ns t r Turn-On Rise Time -78-ns t d(off)Turn-Off Delay Time -48-ns t f Turn-Off Fall Time -15-ns t off
Turn-Off Time
--95
ns
V SD Source to Drain Diode Voltage I SD = 50A -0.9 1.25V I SD = 25A
-0.8 1.0t rr Reverse Recovery Time I F = 50A, dI F /dt = 100A/μs
-3951ns Q rr
Reverse Recovery Charge
-45
59
nC
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: https://www.sodocs.net/doc/503912991.html,/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
MOSFET
?
MOSFET
FDD8444 N-Channel PowerTrench ? MOSFET
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PRODUCT STATUS DEFINITIONS Definition of Terms
ACEx?
ActiveArray?Bottomless?Build it Now?CoolFET?
CROSSVOLT ?DOME?
EcoSPARK?E 2CMOS?EnSigna?FACT ?FAST ?FASTr?FPS?FRFET?
FACT Quiet Series? GlobalOptoisolator?GTO?HiSeC?I 2C?i-Lo ?
ImpliedDisconnect?IntelliMAX?ISOPLANAR?LittleFET?
MICROCOUPLER?MicroFET?MicroPak?MICROWIRE?MSX?MSXPro?
OCX?OCXPro?OPTOLOGIC ?OPTOPLANAR?PACMAN?POP?
Power247?PowerEdge?PowerSaver?PowerTrench ?QFET ?QS?
QT Optoelectronics?Quiet Series?RapidConfigure?RapidConnect?μSerDes?ScalarPump?
SILENT SWITCHER ?SMART START?SPM?Stealth?SuperFET?SuperSOT?-3SuperSOT?-6SuperSOT?-8SyncFET?TCM?
TinyBoost?TinyBuck?TinyPWM?TinyPower?TinyLogic ?TINYOPTO?TruTranslation?UHC ?
UniFET?UltraFET ?VCX?Wire?
Across the board. Around the world.?The Power Franchise ?
Programmable Active Droop?
Datasheet Identification Product Status Definition
Advance Information
Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Rev. I21