SIB414DK-T1-GE3;中文规格书,Datasheet资料

Vishay Siliconix

SiB414DK

Document Number: https://www.sodocs.net/doc/426026982.html,

N-Channel 1.2-V (G-S) MOSFET

FEATURES

?Halogen-free

?TrenchFET ? Power MOSFET

?New Thermally Enhanced PowerPAK ?

SC-75 Package

- Small Footprint Area - Low On-Resistance

APPLICATIONS

?Load Switch, PA Switch and Battery Switch for Portable

Devices

?DC/DC Converter PRODUCT SUMMARY

V DS (V)

R DS(on) (Ω)I D (A)

Q g (Typ.)

8

0.026 at V GS = 4.5 V 9a 8.6 nC 0.030 at V GS = 2.5 V

9a 0.037 at V GS = 1.8 V 9a 0.052 at V GS = 1.5 V 9a 0.089 at V GS = 1.2 V

9a

Notes:

a.Package limited.

b.Surface Mounted on 1" x 1" FR4 board.

c.t = 5 s.

d.See Solder Profile (h ttp://https://www.sodocs.net/doc/426026982.html,/ppg?73257). The PowerPAK SC-75 is a leadless packag

e. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 105 °C/W.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit U nit

Drain-Source Voltage V DS

8V

Gate-Source Voltage V GS

± 5Continuous Drain Current (T J = 150 °C)T C = 25 °C I D 9a A T C = 70 °C 9a T A = 25 °C 7.9b, c

T A = 70 °C 6.3b, c

Pulsed Drain Current I DM 20

Continuous Source-Drain Diode Current

T C = 25 °C I S 9a T A = 25 °C 2b, c

Maximum Power Dissipation

T C = 25 °C

P D 13W T C = 70 °C

8.4T A = 25 °C 2.4b, c T A = 70 °C 1.6b, c

Operating Junction and Storage T emperature Range T J , T stg - 55 to 150

°C Soldering Recommendations (Peak Temperature)

d, e 260THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum U nit

Maximum Junction-to-Ambient b, f

t ≤ 5 s R thJA 4151°C/W

Maximum Junction-to-Case (Drain)Steady State R thJC 7.59.5

https://www.sodocs.net/doc/426026982.html, Document Number: 74635

Vishay Siliconix

SiB414DK

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.Typ.Max.U nit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μA

8

V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA 9.42mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J - 2.52

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 μA 0.351V

Gate-Source Leakage

I GSS V DS = 0 V , V GS = ± 5 V ± 100 nA

Zero Gate Voltage Drain Current I DSS V DS = 8 V , V GS = 0 V 1μA V DS = 8 V , V GS = 0 V , T J = 55 °C

10

On-State Drain Current a

I D(on)

V DS ≤ 5 V , V GS = 4.5 V 20

A

Drain-Source On-State Resistance a

R DS(on)

V GS = 4.5 V , I D = 7.9 A 0.0210.026Ω

V GS = 2.5 V , I D = 7. 4 A

0.02460.030V GS = 1.8 V , I D = 6.6 A 0.0300.037V GS = 1.5 V , I D = 1.92 A 0.0370.052V GS = 1.2 V , I D = 1.02 A

0.0590.089

Forward T ransconductance a g fs

V DS = 4 V , I D = 7.9 A

27

S Dynamic b

Input Capacitance C iss V DS = 4 V , V GS = 0 V, f = 1 MHz

732pF

Output Capacitance

C oss 280Reverse Transfer Capacitance C rss 195Total Gate Charge Q g V DS = 4 V , V GS = 5 V , I

D = 7.9 A 9.3514.03nC V DS = 4 V , V GS = 4.5 V , I D = 7.9 A 8.613

Gate-Source Charge Q gs 0.53Gate-Drain Charge Q gd 2.78Gate Resistance R g f = 1 MHz

3.6Ω

Turn-On Delay Time t d(on) V DD = 4 V , R L = 0.64 Ω I D ? 6.3 A, V GEN = 4.5 V , R g = 1 Ω

710.5ns Rise Time

t r 1319.5Turn-Off Delay Time t d(off) 5075Fall Time

t f

14

21

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

9A Pulse Diode Forward Current I SM 20Body Diode Voltage

V SD I S = 3.2 A, V GS = 0 V

0.7 1.2V Body Diode Reverse Recovery Time t rr I F = 3.2 A, di/dt = 100 A/μs, T J = 25 °C

2335ns Body Diode Reverse Recovery Charge Q rr 8.112.15

nC Reverse Recovery Fall Time t a 13.3ns

Reverse Recovery Rise Time

t b

9.6

Document Number: https://www.sodocs.net/doc/426026982.html,

Vishay Siliconix

SiB414DK

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

https://www.sodocs.net/doc/426026982.html, Document Number: 74635

Vishay Siliconix

SiB414DK

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Soure-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Case

Document Number: https://www.sodocs.net/doc/426026982.html,

Vishay Siliconix

SiB414DK

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

https://www.sodocs.net/doc/426026982.html, Document Number: 74635

Vishay Siliconix

SiB414DK

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.sodocs.net/doc/426026982.html,/ppg?74635.

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix

Package Information

Document Number: https://www.sodocs.net/doc/426026982.html,

PowerPAK ? SC75-6L

DIM

SINGLE PAD

DUAL PAD

MILLIMETERS

INCHES MILLIMETERS

INCHES

Min

Nom Max Min Nom Max Min Nom Max Min Nom Max A 0.6750.750.800.0270.0300.0320.6750.750.800.0270.0300.032A10-0.050-0.0020-0.050-0.002b 0.180.250.330.0070.0100.0130.180.250.330.0070.0100.013C 0.150.200.250.0060.0080.0100.150.200.250.0060.0080.010D 1.53 1.60 1.700.0600.0630.067 1.53 1.60 1.700.0600.0630.067D10.570.670.770.0220.0260.0300.34

0.44

0.540.0130.0170.021D20.100.200.300.0040.0080.012E 1.53 1.60 1.700.0600.0630.067 1.53 1.60 1.700.0600.0630.067E1 1.00 1.10 1.200.0390.0430.0470.51

0.61

0.71

0.020

0.024

0.028

E20.200.250.300.0080.0100.012E30.32

0.370.42

0.013

0.0150.017

e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K10.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K20.200 TYP 0.008 TYP 0.200 BSC

0.008 TYP

K30.255 TYP 0.010 TYP K40.300 TYP 0.012 TYP L 0.150.25

0.35

0.006

0.010

0.014

0.150.250.350.0060.0100.014T

0.03

0.08

0.13

0.001

0.003

0.005

ECN: C-07431 ? Rev. C, 06-Aug-07

DWG: 5935

Application Note 826

Vishay Siliconix

A P P L I C A T I O N N O T E

RECOMMENDED PAD LAYOUT FOR PowerPAK ? SC75-6L Single

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Revision: 12-Mar-121Document Number: 91000

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SIB414DK-T1-GE3