AO4459

Symbol

Typ Max 33406275R θJL 1824Maximum Junction-to-Lead C

Steady-State

°C/W

Thermal Characteristics Parameter

Units Maximum Junction-to-Ambient

A

t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A

Steady-State °C/W AO4459

Symbol

Min Typ

Max

Units BV DSS -30

V -1T J =55°C

-5I GSS ±100nA V GS(th)-1.5-1.85

-2.5

V I D(ON)

-30

A 3846T J =125°C

53685872

m ?g FS 11S V SD -0.78

-1V I S

-3.5

A C iss 668

830pF C oss 126pF C rss 92pF R g

69?Q g (10V)12.7

16nC Q g (4.5V) 6.4nC Q gs 2nC Q gd 4nC t D(on)7.7

ns t r 6.8ns t D(off)20ns t f 10ns t rr 2230ns Q rr

15

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current

Gate resistance

V GS =0V, V DS =0V, f=1MHz

V GS =0V, V DS =-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =2.5?, R GEN =3?

Turn-Off Fall Time

Turn-On DelayTime SWITCHING PARAMETERS

Total Gate Charge (4.5V)Gate Source Charge Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-6.5A

m ?V GS =-4.5V, I D =-5A

I S =-1A,V GS =0V V DS =-5V, I D =-6.5A

R DS(ON)Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I DSS μA Gate Threshold Voltage V DS =V GS I D =-250μA V DS =-24V, V GS =0V

V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

I F =-6.5A, dI/dt=100A/μs

Drain-Source Breakdown Voltage On state drain current

I D =-250μA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-6.5A

Reverse Transfer Capacitance I F =-6.5A, dI/dt=100A/μs A: The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0 Sept 2006